Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Shihyun Ahn; Chen Dong; Weidi Zhu; Byung Jae Kim; Ya His Hwang; Fan Ren; Stephen J. Pearton; Gwangseok Yang; Jihyun Kim; Ivan Kravchenko

doi:10.1149/06914.0129ecst

Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Shihyun Ahn, Chen Dong, Weidi Zhu, Byung Jae Kim, Ya His Hwang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Ivan Kravchenko

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The effects of proton irradiation energy on Al₂O₃/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 10¹⁵ cm^-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	129-135
Number of pages	7
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0129ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

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10.1149/06914.0129ecst

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Ahn, S., Dong, C., Zhu, W., Kim, B. J., Hwang, Y. H., Ren, F., Pearton, S. J., Yang, G., Kim, J., & Kravchenko, I. (2015). Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 129-135). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0129ecst

Ahn, Shihyun ; Dong, Chen ; Zhu, Weidi et al. / Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 129-135 (ECS Transactions; 14).

@inproceedings{86c900bef3964b70b07a3f18c93defed,

title = "Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors",

abstract = "The effects of proton irradiation energy on Al2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 1015 cm-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.",

author = "Shihyun Ahn and Chen Dong and Weidi Zhu and Kim, {Byung Jae} and Hwang, {Ya His} and Fan Ren and Pearton, {Stephen J.} and Gwangseok Yang and Jihyun Kim and Ivan Kravchenko",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06914.0129ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "14",

pages = "129--135",

editor = "He, {J. H.} and C. O'Dwyer and F. Ren and E. Douglas and C. Jagadish and S. Jang and Wang, {Y. L.} and Lynch, {R. P.} and Anderson, {T. J.} and Hite, {J. K.}",

booktitle = "State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58",

edition = "14",

}

Ahn, S, Dong, C, Zhu, W, Kim, BJ, Hwang, YH, Ren, F, Pearton, SJ, Yang, G, Kim, J & Kravchenko, I 2015, Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 129-135, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0129ecst

Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. / Ahn, Shihyun; Dong, Chen; Zhu, Weidi et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 129-135 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

AU - Ahn, Shihyun

AU - Dong, Chen

AU - Zhu, Weidi

AU - Kim, Byung Jae

AU - Hwang, Ya His

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Yang, Gwangseok

AU - Kim, Jihyun

AU - Kravchenko, Ivan

PY - 2015

Y1 - 2015

N2 - The effects of proton irradiation energy on Al2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 1015 cm-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.

AB - The effects of proton irradiation energy on Al2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 1015 cm-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.

UR - http://www.scopus.com/inward/record.url?scp=84945970372&partnerID=8YFLogxK

U2 - 10.1149/06914.0129ecst

DO - 10.1149/06914.0129ecst

M3 - Conference contribution

AN - SCOPUS:84945970372

T3 - ECS Transactions

SP - 129

EP - 135

BT - State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58

A2 - He, J. H.

A2 - O'Dwyer, C.

A2 - Ren, F.

A2 - Douglas, E.

A2 - Jagadish, C.

A2 - Jang, S.

A2 - Wang, Y. L.

A2 - Lynch, R. P.

A2 - Anderson, T. J.

A2 - Hite, J. K.

PB - Electrochemical Society Inc.

T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -

Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F et al. Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 129-135. (ECS Transactions; 14). doi: 10.1149/06914.0129ecst

Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

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