TY - JOUR
T1 - Study of the effects of neutron irradiation on silicon strip detectors
AU - Guibellino, P.
AU - Panizza, G.
AU - Hall, G.
AU - Sotthibandhu, S.
AU - Ziock, H. J.
AU - Ferguson, P.
AU - Sommer, W. F.
AU - Edwards, M.
AU - Cartiglia, N.
AU - Hubbard, B.
AU - Lesloe, J.
AU - Pitzl, D.
AU - O'Shaughnessy, K.
AU - Rowe, W.
AU - Sadoziski, H. F.W.
AU - Seiden, A.
AU - Spencer, E.
PY - 1992/5/1
Y1 - 1992/5/1
N2 - Silicon strip detectors and test structures were exposed to neutron fluences up to Φ = 6.1 × 1014 n/cm2, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ∼ 2.0 × 1013 n/cm2, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors.
AB - Silicon strip detectors and test structures were exposed to neutron fluences up to Φ = 6.1 × 1014 n/cm2, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ∼ 2.0 × 1013 n/cm2, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors.
UR - http://www.scopus.com/inward/record.url?scp=0026868044&partnerID=8YFLogxK
U2 - 10.1016/0168-9002(92)90697-3
DO - 10.1016/0168-9002(92)90697-3
M3 - Article
AN - SCOPUS:0026868044
SN - 0168-9002
VL - 315
SP - 156
EP - 160
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-3
ER -