Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors
- Shihyun Ahn
- , Weidi Zhu
- , Chen Dong
- , Ya Hsi Hwang
- , Byung Jae Kim
- , Fan Ren
- , Stephen J. Pearton
- , Aaron G. Lind
- , Kevin S. Jones
- , Ivan I. Kravchenko
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1
Scopus
citations