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Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors
Shihyun Ahn, Weidi Zhu, Chen Dong, Ya Hsi Hwang, Byung Jae Kim, Fan Ren, Stephen J. Pearton, Aaron G. Lind, Kevin S. Jones, Ivan I. Kravchenko
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1
Scopus
citations