Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Shihyun Ahn, Weidi Zhu, Chen Dong, Ya Hsi Hwang, Byung Jae Kim, Fan Ren, Stephen J. Pearton, Aaron G. Lind, Kevin S. Jones, Ivan I. Kravchenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The influence of different buffer layer quality on AlGaN/GaN high electron mobility transistors (HEMTs) dc characteristics was investigated. Dc measurement by parameter analyzer and gate pulse measurement were performed to compare two different buffer layer quality samples. The same Al concentrations of AlGaN with 2μm and 5μm GaN buffer layers on sapphire substrates from two different vendors were used. The defect densities of 2 μm and 5 μm GaN buffer layer's HEMTs structures measured by transmission electron microscopy (TEM) were 7 × 109 cm-2 and 5 × 108 cm-2, respectively. There was small difference in drain saturation current and transfer characteristics in HMETs for these two types of buffer. Non-passivated HEMT with 5 μm GaN buffer layer showed no dispersion in gate-lag pulsed measurement at 100 kHz but HEMT with 2 μm GaN buffer layer showed 71% drain current reduction at 100 kHz gate-lag pulsed measurement.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
EditorsJ. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
PublisherElectrochemical Society Inc.
Pages103-108
Number of pages6
Edition14
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number14
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

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