Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

Jaewon Park; Christopher M. Rouleau; Douglas H. Lowndes

doi:10.1557/proc-526-27

Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

Jaewon Park, Christopher M. Rouleau, Douglas H. Lowndes

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2°-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (T_p) of 250 - 425 °C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at T_p≥355 °C but was greatly reduced at T_p = 250 °C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	526
DOIs	https://doi.org/10.1557/proc-526-27
State	Published - 1998
Event	Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 16 1998

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@article{3340b8dad1de4bec9520e2a668988c85,

title = "Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation",

abstract = "N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2°-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (Tp) of 250 - 425 °C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at Tp≥355 °C but was greatly reduced at Tp = 250 °C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.",

author = "Jaewon Park and Rouleau, {Christopher M.} and Lowndes, {Douglas H.}",

year = "1998",

doi = "10.1557/proc-526-27",

language = "English",

volume = "526",

pages = "27--32",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1998 MRS Spring Meeting ; Conference date: 13-04-1998 Through 16-04-1998",

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TY - JOUR

T1 - Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

AU - Park, Jaewon

AU - Rouleau, Christopher M.

AU - Lowndes, Douglas H.

PY - 1998

Y1 - 1998

N2 - N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2°-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (Tp) of 250 - 425 °C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at Tp≥355 °C but was greatly reduced at Tp = 250 °C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.

AB - N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2°-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (Tp) of 250 - 425 °C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at Tp≥355 °C but was greatly reduced at Tp = 250 °C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.

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U2 - 10.1557/proc-526-27

DO - 10.1557/proc-526-27

M3 - Conference article

AN - SCOPUS:0032306657

SN - 0272-9172

VL - 526

SP - 27

EP - 32

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Meeting

Y2 - 13 April 1998 through 16 April 1998

ER -

Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

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