Study of silicon photomultiplier performance in external electric fields

X. L. Sun; T. Tolba; G. F. Cao; P. Lv; L. J. Wen; A. Odian; F. Vachon; A. Alamre; J. B. Albert; G. Anton; I. J. Arnquist; I. Badhrees; P. S. Barbeau; D. Beck; V. Belov; T. Bhatta; F. Bourque; J. P. Brodsky; E. Brown; T. Brunner; A. Burenkov; L. Cao; W. R. Cen; C. Chambers; S. A. Charlebois; M. Chiu; B. Cleveland; M. Coon; M. Côté; A. Craycraft; W. Cree; J. Dalmasson; T. Daniels; L. Darroch; S. J. Daugherty; J. Daughhetee; S. Delaquis; A. Der Mesrobian-Kabakian; R. Devoe; J. Dilling; Y. Y. Ding; M. J. Dolinski; A. Dragone; J. Echevers; L. Fabris; D. Fairbank; W. Fairbank; J. Farine; S. Feyzbakhsh; P. Fierlinger; R. Fontaine; D. Fudenberg; G. Gallina; G. Giacomini; R. Gornea; G. Gratta; E. V. Hansen; D. Harris; M. Heffner; E. W. Hoppe; J. Hößl; A. House; P. Hufschmidt; M. Hughes; Y. Ito; A. Iverson; A. Jamil; C. Jessiman; M. J. Jewell; X. S. Jiang; A. Karelin; L. J. Kaufman; D. Kodroff; T. Koffas; S. Kravitz; R. Krücken; A. Kuchenkov; K. S. Kumar; Y. Lan; A. Larson; D. S. Leonard; G. Li; S. Li; Z. Li; C. Licciardi; Y. H. Lin; R. Maclellan; T. Michel; M. Moe; B. Mong; D. C. Moore; K. Murray; R. J. Newby; Z. Ning; O. Njoya; F. Nolet; O. Nusair; K. Odgers; M. Oriunno; J. L. Orrell; G. S. Ortega; I. Ostrovskiy; C. T. Overman; S. Parent; A. Piepke; A. Pocar; J. F. Pratte; D. Qiu; V. Radeka; E. Raguzin; T. Rao; S. Rescia; F. Retière; A. Robinson; T. Rossignol; P. C. Rowson; N. Roy; R. Saldanha; S. Sangiorgio; S. Schmidt; J. Schneider; D. Sinclair; K. Skarpaas Viii; A. K. Soma; G. St-Hilaire; V. Stekhanov; T. Stiegler; M. Tarka; J. Todd; T. I. Totev; R. Tsang; T. Tsang; B. Veenstra; V. Veeraraghavan; G. Visser; J. L. Vuilleumier; M. Wagenpfeil; Q. Wang; J. Watkins; M. Weber; W. Wei; U. Wichoski; G. Wrede; S. X. Wu; W. H. Wu; Q. Xia; L. Yang; Y. R. Yen; O. Zeldovich; J. Zhao; Y. Zhou; T. Ziegler

doi:10.1088/1748-0221/13/09/T09006

Study of silicon photomultiplier performance in external electric fields

X. L. Sun
, T. Tolba
, G. F. Cao
, P. Lv
, L. J. Wen
, A. Odian
, F. Vachon
, A. Alamre
, J. B. Albert
, G. Anton
, I. J. Arnquist
, I. Badhrees
, P. S. Barbeau
, D. Beck
, V. Belov
, T. Bhatta
, F. Bourque
, J. P. Brodsky
, E. Brown
, T. Brunner

A. Burenkov, L. Cao, W. R. Cen, C. Chambers, S. A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S. J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. Devoe, J. Dilling, Y. Y. Ding, M. J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E. V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M. J. Jewell, X. S. Jiang, A. Karelin, L. J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y. H. Lin, R. Maclellan, T. Michel, M. Moe, B. Mong, D. C. Moore, K. Murray, R. J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas Viii, A. K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T. I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J. L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S. X. Wu, W. H. Wu, Q. Xia, L. Yang, Y. R. Yen, O. Zeldovich, J. Zhao, Y. Zhou, T. Ziegler

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

Original language	English
Article number	T09006
Journal	Journal of Instrumentation
Volume	13
Issue number	9
DOIs	https://doi.org/10.1088/1748-0221/13/09/T09006
State	Published - Sep 17 2018

Funding

This work has been supported by CAS and ISTCP in China, DOE and NSF in the United States, NSERC, CFI, FRQNT, NRC, and the McDonald Institute (CFREF) in Canada, IBS in South Korea and RFBR in Russia. X.L. Sun was supported, in part, by the Young Scientists Fund of the Chinese National Natural Science Foundation.

Keywords

Cryogenic detectors
Double-beta decay detectors
Noble liquid detectors (scintillation, ionization, double-phase)
Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)

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10.1088/1748-0221/13/09/T09006

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Sun, X. L., Tolba, T., Cao, G. F., Lv, P., Wen, L. J., Odian, A., Vachon, F., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., ... Ziegler, T. (2018). Study of silicon photomultiplier performance in external electric fields. Journal of Instrumentation, 13(9), Article T09006. https://doi.org/10.1088/1748-0221/13/09/T09006

@article{a039e99eed3c4707b94f5ca08ce08953,

title = "Study of silicon photomultiplier performance in external electric fields",

abstract = "We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.",

keywords = "Cryogenic detectors, Double-beta decay detectors, Noble liquid detectors (scintillation, ionization, double-phase), Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)",

author = "Sun, \{X. L.\} and T. Tolba and Cao, \{G. F.\} and P. Lv and Wen, \{L. J.\} and A. Odian and F. Vachon and A. Alamre and Albert, \{J. B.\} and G. Anton and Arnquist, \{I. J.\} and I. Badhrees and Barbeau, \{P. S.\} and D. Beck and V. Belov and T. Bhatta and F. Bourque and Brodsky, \{J. P.\} and E. Brown and T. Brunner and A. Burenkov and L. Cao and Cen, \{W. R.\} and C. Chambers and Charlebois, \{S. A.\} and M. Chiu and B. Cleveland and M. Coon and M. C{\^o}t{\'e} and A. Craycraft and W. Cree and J. Dalmasson and T. Daniels and L. Darroch and Daugherty, \{S. J.\} and J. Daughhetee and S. Delaquis and Mesrobian-Kabakian, \{A. Der\} and R. Devoe and J. Dilling and Ding, \{Y. Y.\} and Dolinski, \{M. J.\} and A. Dragone and J. Echevers and L. Fabris and D. Fairbank and W. Fairbank and J. Farine and S. Feyzbakhsh and P. Fierlinger and R. Fontaine and D. Fudenberg and G. Gallina and G. Giacomini and R. Gornea and G. Gratta and Hansen, \{E. V.\} and D. Harris and M. Heffner and Hoppe, \{E. W.\} and J. H{\"o}{\ss}l and A. House and P. Hufschmidt and M. Hughes and Y. Ito and A. Iverson and A. Jamil and C. Jessiman and Jewell, \{M. J.\} and Jiang, \{X. S.\} and A. Karelin and Kaufman, \{L. J.\} and D. Kodroff and T. Koffas and S. Kravitz and R. Kr{\"u}cken and A. Kuchenkov and Kumar, \{K. S.\} and Y. Lan and A. Larson and Leonard, \{D. S.\} and G. Li and S. Li and Z. Li and C. Licciardi and Lin, \{Y. H.\} and R. Maclellan and T. Michel and M. Moe and B. Mong and Moore, \{D. C.\} and K. Murray and Newby, \{R. J.\} and Z. Ning and O. Njoya and F. Nolet and O. Nusair and K. Odgers and M. Oriunno and Orrell, \{J. L.\} and Ortega, \{G. S.\} and I. Ostrovskiy and Overman, \{C. T.\} and S. Parent and A. Piepke and A. Pocar and Pratte, \{J. F.\} and D. Qiu and V. Radeka and E. Raguzin and T. Rao and S. Rescia and F. Reti{\`e}re and A. Robinson and T. Rossignol and Rowson, \{P. C.\} and N. Roy and R. Saldanha and S. Sangiorgio and S. Schmidt and J. Schneider and D. Sinclair and Viii, \{K. Skarpaas\} and Soma, \{A. K.\} and G. St-Hilaire and V. Stekhanov and T. Stiegler and M. Tarka and J. Todd and Totev, \{T. I.\} and R. Tsang and T. Tsang and B. Veenstra and V. Veeraraghavan and G. Visser and Vuilleumier, \{J. L.\} and M. Wagenpfeil and Q. Wang and J. Watkins and M. Weber and W. Wei and U. Wichoski and G. Wrede and Wu, \{S. X.\} and Wu, \{W. H.\} and Q. Xia and L. Yang and Yen, \{Y. R.\} and O. Zeldovich and J. Zhao and Y. Zhou and T. Ziegler",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd and Sissa Medialab.",

year = "2018",

month = sep,

day = "17",

doi = "10.1088/1748-0221/13/09/T09006",

language = "English",

volume = "13",

journal = "Journal of Instrumentation",

issn = "1748-0221",

publisher = "IOP Publishing",

number = "9",

}

Sun, XL, Tolba, T, Cao, GF, Lv, P, Wen, LJ, Odian, A, Vachon, F, Alamre, A, Albert, JB, Anton, G, Arnquist, IJ, Badhrees, I, Barbeau, PS, Beck, D, Belov, V, Bhatta, T, Bourque, F, Brodsky, JP, Brown, E, Brunner, T, Burenkov, A, Cao, L, Cen, WR, Chambers, C, Charlebois, SA, Chiu, M, Cleveland, B, Coon, M, Côté, M, Craycraft, A, Cree, W, Dalmasson, J, Daniels, T, Darroch, L, Daugherty, SJ, Daughhetee, J, Delaquis, S, Mesrobian-Kabakian, AD, Devoe, R, Dilling, J, Ding, YY, Dolinski, MJ, Dragone, A, Echevers, J, Fabris, L, Fairbank, D, Fairbank, W, Farine, J, Feyzbakhsh, S, Fierlinger, P, Fontaine, R, Fudenberg, D, Gallina, G, Giacomini, G, Gornea, R, Gratta, G, Hansen, EV, Harris, D, Heffner, M, Hoppe, EW, Hößl, J, House, A, Hufschmidt, P, Hughes, M, Ito, Y, Iverson, A, Jamil, A, Jessiman, C, Jewell, MJ, Jiang, XS, Karelin, A, Kaufman, LJ, Kodroff, D, Koffas, T, Kravitz, S, Krücken, R, Kuchenkov, A, Kumar, KS, Lan, Y, Larson, A, Leonard, DS, Li, G, Li, S, Li, Z, Licciardi, C, Lin, YH, Maclellan, R, Michel, T, Moe, M, Mong, B, Moore, DC, Murray, K, Newby, RJ, Ning, Z, Njoya, O, Nolet, F, Nusair, O, Odgers, K, Oriunno, M, Orrell, JL, Ortega, GS, Ostrovskiy, I, Overman, CT, Parent, S, Piepke, A, Pocar, A, Pratte, JF, Qiu, D, Radeka, V, Raguzin, E, Rao, T, Rescia, S, Retière, F, Robinson, A, Rossignol, T, Rowson, PC, Roy, N, Saldanha, R, Sangiorgio, S, Schmidt, S, Schneider, J, Sinclair, D, Viii, KS, Soma, AK, St-Hilaire, G, Stekhanov, V, Stiegler, T, Tarka, M, Todd, J, Totev, TI, Tsang, R, Tsang, T, Veenstra, B, Veeraraghavan, V, Visser, G, Vuilleumier, JL, Wagenpfeil, M, Wang, Q, Watkins, J, Weber, M, Wei, W, Wichoski, U, Wrede, G, Wu, SX, Wu, WH, Xia, Q, Yang, L, Yen, YR, Zeldovich, O, Zhao, J, Zhou, Y & Ziegler, T 2018, 'Study of silicon photomultiplier performance in external electric fields', Journal of Instrumentation, vol. 13, no. 9, T09006. https://doi.org/10.1088/1748-0221/13/09/T09006

TY - JOUR

T1 - Study of silicon photomultiplier performance in external electric fields

AU - Sun, X. L.

AU - Tolba, T.

AU - Cao, G. F.

AU - Lv, P.

AU - Wen, L. J.

AU - Odian, A.

AU - Vachon, F.

AU - Alamre, A.

AU - Albert, J. B.

AU - Anton, G.

AU - Arnquist, I. J.

AU - Badhrees, I.

AU - Barbeau, P. S.

AU - Beck, D.

AU - Belov, V.

AU - Bhatta, T.

AU - Bourque, F.

AU - Brodsky, J. P.

AU - Brown, E.

AU - Brunner, T.

AU - Burenkov, A.

AU - Cao, L.

AU - Cen, W. R.

AU - Chambers, C.

AU - Charlebois, S. A.

AU - Chiu, M.

AU - Cleveland, B.

AU - Coon, M.

AU - Côté, M.

AU - Craycraft, A.

AU - Cree, W.

AU - Dalmasson, J.

AU - Daniels, T.

AU - Darroch, L.

AU - Daugherty, S. J.

AU - Daughhetee, J.

AU - Delaquis, S.

AU - Mesrobian-Kabakian, A. Der

AU - Devoe, R.

AU - Dilling, J.

AU - Ding, Y. Y.

AU - Dolinski, M. J.

AU - Dragone, A.

AU - Echevers, J.

AU - Fabris, L.

AU - Fairbank, D.

AU - Fairbank, W.

AU - Farine, J.

AU - Feyzbakhsh, S.

AU - Fierlinger, P.

AU - Fontaine, R.

AU - Fudenberg, D.

AU - Gallina, G.

AU - Giacomini, G.

AU - Gornea, R.

AU - Gratta, G.

AU - Hansen, E. V.

AU - Harris, D.

AU - Heffner, M.

AU - Hoppe, E. W.

AU - Hößl, J.

AU - House, A.

AU - Hufschmidt, P.

AU - Hughes, M.

AU - Ito, Y.

AU - Iverson, A.

AU - Jamil, A.

AU - Jessiman, C.

AU - Jewell, M. J.

AU - Jiang, X. S.

AU - Karelin, A.

AU - Kaufman, L. J.

AU - Kodroff, D.

AU - Koffas, T.

AU - Kravitz, S.

AU - Krücken, R.

AU - Kuchenkov, A.

AU - Kumar, K. S.

AU - Lan, Y.

AU - Larson, A.

AU - Leonard, D. S.

AU - Li, G.

AU - Li, S.

AU - Li, Z.

AU - Licciardi, C.

AU - Lin, Y. H.

AU - Maclellan, R.

AU - Michel, T.

AU - Moe, M.

AU - Mong, B.

AU - Moore, D. C.

AU - Murray, K.

AU - Newby, R. J.

AU - Ning, Z.

AU - Njoya, O.

AU - Nolet, F.

AU - Nusair, O.

AU - Odgers, K.

AU - Oriunno, M.

AU - Orrell, J. L.

AU - Ortega, G. S.

AU - Ostrovskiy, I.

AU - Overman, C. T.

AU - Parent, S.

AU - Piepke, A.

AU - Pocar, A.

AU - Pratte, J. F.

AU - Qiu, D.

AU - Radeka, V.

AU - Raguzin, E.

AU - Rao, T.

AU - Rescia, S.

AU - Retière, F.

AU - Robinson, A.

AU - Rossignol, T.

AU - Rowson, P. C.

AU - Roy, N.

AU - Saldanha, R.

AU - Sangiorgio, S.

AU - Schmidt, S.

AU - Schneider, J.

AU - Sinclair, D.

AU - Viii, K. Skarpaas

AU - Soma, A. K.

AU - St-Hilaire, G.

AU - Stekhanov, V.

AU - Stiegler, T.

AU - Tarka, M.

AU - Todd, J.

AU - Totev, T. I.

AU - Tsang, R.

AU - Tsang, T.

AU - Veenstra, B.

AU - Veeraraghavan, V.

AU - Visser, G.

AU - Vuilleumier, J. L.

AU - Wagenpfeil, M.

AU - Wang, Q.

AU - Watkins, J.

AU - Weber, M.

AU - Wei, W.

AU - Wichoski, U.

AU - Wrede, G.

AU - Wu, S. X.

AU - Wu, W. H.

AU - Xia, Q.

AU - Yang, L.

AU - Yen, Y. R.

AU - Zeldovich, O.

AU - Zhao, J.

AU - Zhou, Y.

AU - Ziegler, T.

PY - 2018/9/17

Y1 - 2018/9/17

N2 - We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

AB - We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

KW - Cryogenic detectors

KW - Double-beta decay detectors

KW - Noble liquid detectors (scintillation, ionization, double-phase)

KW - Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)

UR - https://www.scopus.com/pages/publications/85055529185

U2 - 10.1088/1748-0221/13/09/T09006

DO - 10.1088/1748-0221/13/09/T09006

M3 - Article

AN - SCOPUS:85055529185

SN - 1748-0221

VL - 13

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 9

M1 - T09006

ER -

Study of silicon photomultiplier performance in external electric fields

Abstract

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Keywords

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