Study of radiation effects on AC-coupled silicon strip detectors

D. D. Pitzl; N. Cartiglia; K. Clark; B. Hubbard; J. Leslie; K. O'Shaughnessy; W. Rowe; H. F.W. Sadrozinski; E. Spencer; H. J. Ziock; P. Ferguson; E. C. Milner; W. F. Sommer; J. Ellison

doi:10.1016/0920-5632(91)90067-O

Study of radiation effects on AC-coupled silicon strip detectors

D. D. Pitzl, N. Cartiglia, K. Clark, B. Hubbard, J. Leslie, K. O'Shaughnessy, W. Rowe, H. F.W. Sadrozinski, E. Spencer, H. J. Ziock, P. Ferguson, E. C. Milner, W. F. Sommer, J. Ellison

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

AC-coupled silicon strip detectors were exposed to neutron fluences of 5·10¹³n/cm² and to Co⁶⁰ photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO₂ was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.

Original language	English
Pages (from-to)	340-346
Number of pages	7
Journal	Nuclear Physics B - Proceedings Supplements
Volume	23
Issue number	1
DOIs	https://doi.org/10.1016/0920-5632(91)90067-O
State	Published - Jul 1991
Externally published	Yes

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Pitzl, D. D., Cartiglia, N., Clark, K., Hubbard, B., Leslie, J., O'Shaughnessy, K., Rowe, W., Sadrozinski, H. F. W., Spencer, E., Ziock, H. J., Ferguson, P., Milner, E. C., Sommer, W. F., & Ellison, J. (1991). Study of radiation effects on AC-coupled silicon strip detectors. Nuclear Physics B - Proceedings Supplements, 23(1), 340-346. https://doi.org/10.1016/0920-5632(91)90067-O

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title = "Study of radiation effects on AC-coupled silicon strip detectors",

abstract = "AC-coupled silicon strip detectors were exposed to neutron fluences of 5·1013n/cm2 and to Co60 photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15\% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO2 was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.",

author = "Pitzl, \{D. D.\} and N. Cartiglia and K. Clark and B. Hubbard and J. Leslie and K. O'Shaughnessy and W. Rowe and Sadrozinski, \{H. F.W.\} and E. Spencer and Ziock, \{H. J.\} and P. Ferguson and Milner, \{E. C.\} and Sommer, \{W. F.\} and J. Ellison",

year = "1991",

month = jul,

doi = "10.1016/0920-5632(91)90067-O",

language = "English",

volume = "23",

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journal = "Nuclear Physics B - Proceedings Supplements",

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T1 - Study of radiation effects on AC-coupled silicon strip detectors

AU - Pitzl, D. D.

AU - Cartiglia, N.

AU - Clark, K.

AU - Hubbard, B.

AU - Leslie, J.

AU - O'Shaughnessy, K.

AU - Rowe, W.

AU - Sadrozinski, H. F.W.

AU - Spencer, E.

AU - Ziock, H. J.

AU - Ferguson, P.

AU - Milner, E. C.

AU - Sommer, W. F.

AU - Ellison, J.

PY - 1991/7

Y1 - 1991/7

N2 - AC-coupled silicon strip detectors were exposed to neutron fluences of 5·1013n/cm2 and to Co60 photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO2 was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.

AB - AC-coupled silicon strip detectors were exposed to neutron fluences of 5·1013n/cm2 and to Co60 photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO2 was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.

UR - https://www.scopus.com/pages/publications/4244140181

U2 - 10.1016/0920-5632(91)90067-O

DO - 10.1016/0920-5632(91)90067-O

M3 - Article

AN - SCOPUS:4244140181

SN - 0920-5632

VL - 23

SP - 340

EP - 346

JO - Nuclear Physics B - Proceedings Supplements

JF - Nuclear Physics B - Proceedings Supplements

IS - 1

ER -

Study of radiation effects on AC-coupled silicon strip detectors

Abstract

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