Study of GaN radiation sensor after in-core neutron irradiation

Padhraic Mulligan; Jie Qiu; Jinghui Wang; Lei R. Cao

doi:10.1109/ANIMMA.2013.6727935

Study of GaN radiation sensor after in-core neutron irradiation

Padhraic Mulligan, Jie Qiu, Jinghui Wang, Lei R. Cao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 10¹⁶ n/cm². The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 10¹⁵ n/cm².

Original language	English
Title of host publication	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013
DOIs	https://doi.org/10.1109/ANIMMA.2013.6727935
State	Published - 2013
Externally published	Yes
Event	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013 - Marseille, France Duration: Jun 23 2013 → Jun 27 2013

Publication series

Name	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013

Conference

Conference	2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013
Country/Territory	France
City	Marseille
Period	06/23/13 → 06/27/13

Keywords

Gallium nitride
alpha detector
high radiation field

Access to Document

10.1109/ANIMMA.2013.6727935

Cite this

Mulligan, P., Qiu, J., Wang, J., & Cao, L. R. (2013). Study of GaN radiation sensor after in-core neutron irradiation. In 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013 Article 6727935 (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013). https://doi.org/10.1109/ANIMMA.2013.6727935

Mulligan, Padhraic ; Qiu, Jie ; Wang, Jinghui et al. / Study of GaN radiation sensor after in-core neutron irradiation. 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. 2013. (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013).

@inproceedings{60c16af9ea0d40d0af192a0c806a7a8f,

title = "Study of GaN radiation sensor after in-core neutron irradiation",

abstract = "GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.",

keywords = "Gallium nitride, alpha detector, high radiation field",

author = "Padhraic Mulligan and Jie Qiu and Jinghui Wang and Cao, {Lei R.}",

year = "2013",

doi = "10.1109/ANIMMA.2013.6727935",

language = "English",

isbn = "9781479910472",

series = "2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013",

booktitle = "2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013",

note = "2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013 ; Conference date: 23-06-2013 Through 27-06-2013",

}

Mulligan, P, Qiu, J, Wang, J & Cao, LR 2013, Study of GaN radiation sensor after in-core neutron irradiation. in 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013., 6727935, 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, Marseille, France, 06/23/13. https://doi.org/10.1109/ANIMMA.2013.6727935

Study of GaN radiation sensor after in-core neutron irradiation. / Mulligan, Padhraic; Qiu, Jie; Wang, Jinghui et al.
2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. 2013. 6727935 (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of GaN radiation sensor after in-core neutron irradiation

AU - Mulligan, Padhraic

AU - Qiu, Jie

AU - Wang, Jinghui

AU - Cao, Lei R.

PY - 2013

Y1 - 2013

N2 - GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.

AB - GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.

KW - Gallium nitride

KW - alpha detector

KW - high radiation field

UR - http://www.scopus.com/inward/record.url?scp=84894484588&partnerID=8YFLogxK

U2 - 10.1109/ANIMMA.2013.6727935

DO - 10.1109/ANIMMA.2013.6727935

M3 - Conference contribution

AN - SCOPUS:84894484588

SN - 9781479910472

T3 - 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013

BT - 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013

T2 - 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013

Y2 - 23 June 2013 through 27 June 2013

ER -

Mulligan P, Qiu J, Wang J, Cao LR. Study of GaN radiation sensor after in-core neutron irradiation. In 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. 2013. 6727935. (2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013). doi: 10.1109/ANIMMA.2013.6727935

Study of GaN radiation sensor after in-core neutron irradiation

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