Study of GaN radiation sensor after in-core neutron irradiation

Padhraic Mulligan, Jie Qiu, Jinghui Wang, Lei R. Cao

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.

Original languageEnglish
Article number6850095
Pages (from-to)2040-2044
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number4
DOIs
StatePublished - Aug 2014
Externally publishedYes

Funding

Keywords

  • Alpha detector
  • gallium nitride
  • high radiation field

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