Abstract
GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.
Original language | English |
---|---|
Article number | 6850095 |
Pages (from-to) | 2040-2044 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 61 |
Issue number | 4 |
DOIs | |
State | Published - Aug 2014 |
Externally published | Yes |
Funding
Keywords
- Alpha detector
- gallium nitride
- high radiation field