STUDY OF GaAs INVERSION-BASE BIPOLAR TRANSISTOR.

C. I. Huang; M. E. Cheney; M. J. Paulus; J. E. Scheihing; J. O. Crist; M. E. Sopko; C. A. Bozada; C. E. Stutz; R. L. Jones; K. R. Evans

STUDY OF GaAs INVERSION-BASE BIPOLAR TRANSISTOR.

C. I. Huang, M. E. Cheney, M. J. Paulus, J. E. Scheihing, J. O. Crist, M. E. Sopko, C. A. Bozada, C. E. Stutz, R. L. Jones, K. R. Evans

Research output: Contribution to conference › Paper › peer-review

Abstract

With a modified device structure which ensures the integrity of the barrier and facilitates base inversion, the concept of a GaAs inversion-base bipolar transistor (IBT) has been verified and its performance improved. The transistor action follows the theoretically expected temperature dependency of current which was not the case in previous work. The device threshold and offset voltages are too high for large-scale-integrated-circuit applications. Further device structure optimization and characterization are needed before the practical applications of the IBT can be realized.

Original language	English
Pages	293-298
Number of pages	6
State	Published - 1987
Externally published	Yes

Cite this

@conference{58e532eb9cba4c62872e48c86a2de822,

title = "STUDY OF GaAs INVERSION-BASE BIPOLAR TRANSISTOR.",

abstract = "With a modified device structure which ensures the integrity of the barrier and facilitates base inversion, the concept of a GaAs inversion-base bipolar transistor (IBT) has been verified and its performance improved. The transistor action follows the theoretically expected temperature dependency of current which was not the case in previous work. The device threshold and offset voltages are too high for large-scale-integrated-circuit applications. Further device structure optimization and characterization are needed before the practical applications of the IBT can be realized.",

author = "Huang, {C. I.} and Cheney, {M. E.} and Paulus, {M. J.} and Scheihing, {J. E.} and Crist, {J. O.} and Sopko, {M. E.} and Bozada, {C. A.} and Stutz, {C. E.} and Jones, {R. L.} and Evans, {K. R.}",

year = "1987",

language = "English",

pages = "293--298",

}

TY - CONF

T1 - STUDY OF GaAs INVERSION-BASE BIPOLAR TRANSISTOR.

AU - Huang, C. I.

AU - Cheney, M. E.

AU - Paulus, M. J.

AU - Scheihing, J. E.

AU - Crist, J. O.

AU - Sopko, M. E.

AU - Bozada, C. A.

AU - Stutz, C. E.

AU - Jones, R. L.

AU - Evans, K. R.

PY - 1987

Y1 - 1987

N2 - With a modified device structure which ensures the integrity of the barrier and facilitates base inversion, the concept of a GaAs inversion-base bipolar transistor (IBT) has been verified and its performance improved. The transistor action follows the theoretically expected temperature dependency of current which was not the case in previous work. The device threshold and offset voltages are too high for large-scale-integrated-circuit applications. Further device structure optimization and characterization are needed before the practical applications of the IBT can be realized.

AB - With a modified device structure which ensures the integrity of the barrier and facilitates base inversion, the concept of a GaAs inversion-base bipolar transistor (IBT) has been verified and its performance improved. The transistor action follows the theoretically expected temperature dependency of current which was not the case in previous work. The device threshold and offset voltages are too high for large-scale-integrated-circuit applications. Further device structure optimization and characterization are needed before the practical applications of the IBT can be realized.

UR - http://www.scopus.com/inward/record.url?scp=0023563059&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0023563059

SP - 293

EP - 298

ER -

STUDY OF GaAs INVERSION-BASE BIPOLAR TRANSISTOR.

Abstract

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