Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

Y. Liao; F. Ye; Q. Y. Shao; C. Chang; G. Z. Wang; R. C. Fang

doi:10.1016/S0040-6090(00)00767-7

Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

Y. Liao, F. Ye, Q. Y. Shao, C. Chang, G. Z. Wang, R. C. Fang

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The nucleation and growth process of diamond film on porous silicon in a hot-filament chemical vapor deposition system were investigated. The nucleation density of 3.6 × 10⁷ cm^-2 was obtained. We find that almost all of the nuclei occur at the edge of the etched pores, and the continuous diamond films are successfully deposited without seeding diamond particles. The characters of diamond films were determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. No strains are found in diamond films, and no intermediates are found between the films and porous silicon substrates.

Original language	English
Pages (from-to)	211-215
Number of pages	5
Journal	Thin Solid Films
Volume	368
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(00)00767-7
State	Published - Jun 15 2000
Externally published	Yes
Event	1st Asian Conference on Chemical Vapour Deposition (CVD) - Shanghai, China Duration: May 10 1999 → May 13 1999

Funding

This work was supported by the National Advanced Materials Committee of China (NAMCC), and supported by the National Nature Science Foundation of China.

Funders	Funder number
National Advanced Materials Committee of China
National Nature Science Foundation of China

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10.1016/S0040-6090(00)00767-7

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title = "Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition",

abstract = "The nucleation and growth process of diamond film on porous silicon in a hot-filament chemical vapor deposition system were investigated. The nucleation density of 3.6 × 107 cm-2 was obtained. We find that almost all of the nuclei occur at the edge of the etched pores, and the continuous diamond films are successfully deposited without seeding diamond particles. The characters of diamond films were determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. No strains are found in diamond films, and no intermediates are found between the films and porous silicon substrates.",

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T1 - Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

AU - Liao, Y.

AU - Ye, F.

AU - Shao, Q. Y.

AU - Chang, C.

AU - Wang, G. Z.

AU - Fang, R. C.

PY - 2000/6/15

Y1 - 2000/6/15

N2 - The nucleation and growth process of diamond film on porous silicon in a hot-filament chemical vapor deposition system were investigated. The nucleation density of 3.6 × 107 cm-2 was obtained. We find that almost all of the nuclei occur at the edge of the etched pores, and the continuous diamond films are successfully deposited without seeding diamond particles. The characters of diamond films were determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. No strains are found in diamond films, and no intermediates are found between the films and porous silicon substrates.

AB - The nucleation and growth process of diamond film on porous silicon in a hot-filament chemical vapor deposition system were investigated. The nucleation density of 3.6 × 107 cm-2 was obtained. We find that almost all of the nuclei occur at the edge of the etched pores, and the continuous diamond films are successfully deposited without seeding diamond particles. The characters of diamond films were determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. No strains are found in diamond films, and no intermediates are found between the films and porous silicon substrates.

UR - http://www.scopus.com/inward/record.url?scp=0033715403&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)00767-7

DO - 10.1016/S0040-6090(00)00767-7

M3 - Conference article

AN - SCOPUS:0033715403

SN - 0040-6090

VL - 368

SP - 211

EP - 215

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

T2 - 1st Asian Conference on Chemical Vapour Deposition (CVD)

Y2 - 10 May 1999 through 13 May 1999

ER -

Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

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