Study of defect-dipoles in an epitaxial ferroelectric thin film

C. M. Folkman; S. H. Baek; C. T. Nelson; H. W. Jang; T. Tybell; X. Q. Pan; C. B. Eom

doi:10.1063/1.3298362

Study of defect-dipoles in an epitaxial ferroelectric thin film

C. M. Folkman, S. H. Baek, C. T. Nelson, H. W. Jang, T. Tybell, X. Q. Pan, C. B. Eom

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

We have analyzed the defect contributions to the in-plane polarization switching of epitaxial (001) BiFeO₃ thin films on (110) TbScO ₃ substrates. Interdigitated electrodes were patterned with respect to ferroelectric stripe domains in the BiFeO₃ film. Polarization measurements exhibited a clear double hysteresis caused by the presence of a static defect field (∼40 kV/cm); the field resulted from ordered defect-dipoles initially aligned to the spontaneous polarization. By monitoring the defect field, both realignment and disassociation of the defect-dipoles were demonstrated. These results establish the arrangement of defect-dipoles in epitaxial ferroelectric thin films, guiding technologies and opening an avenue for defect related studies.

Original language	English
Article number	052903
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3298362
State	Published - 2010
Externally published	Yes

Funding

Work was supported by ONR under Grant No. N00014-07-1-0215, the National Science Foundation under Grant Nos. ECCS-0708759, and a David & Lucile Packard Fellowship (C.B.E.). Work at the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11367. The work at the University of Michigan was supported by the Department of Energy through Grant. No. DE-FG02–07ER46416.

Funders	Funder number
National Science Foundation	ECCS-0708759
Office of Naval Research	N00014-07-1-0215
U.S. Department of Energy	DE-FG02–07ER46416
Office of Science
Basic Energy Sciences	DE-AC02-06CH11367

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title = "Study of defect-dipoles in an epitaxial ferroelectric thin film",

abstract = "We have analyzed the defect contributions to the in-plane polarization switching of epitaxial (001) BiFeO3 thin films on (110) TbScO 3 substrates. Interdigitated electrodes were patterned with respect to ferroelectric stripe domains in the BiFeO3 film. Polarization measurements exhibited a clear double hysteresis caused by the presence of a static defect field (∼40 kV/cm); the field resulted from ordered defect-dipoles initially aligned to the spontaneous polarization. By monitoring the defect field, both realignment and disassociation of the defect-dipoles were demonstrated. These results establish the arrangement of defect-dipoles in epitaxial ferroelectric thin films, guiding technologies and opening an avenue for defect related studies.",

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AU - Folkman, C. M.

AU - Baek, S. H.

AU - Nelson, C. T.

AU - Jang, H. W.

AU - Tybell, T.

AU - Pan, X. Q.

AU - Eom, C. B.

PY - 2010

Y1 - 2010

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AB - We have analyzed the defect contributions to the in-plane polarization switching of epitaxial (001) BiFeO3 thin films on (110) TbScO 3 substrates. Interdigitated electrodes were patterned with respect to ferroelectric stripe domains in the BiFeO3 film. Polarization measurements exhibited a clear double hysteresis caused by the presence of a static defect field (∼40 kV/cm); the field resulted from ordered defect-dipoles initially aligned to the spontaneous polarization. By monitoring the defect field, both realignment and disassociation of the defect-dipoles were demonstrated. These results establish the arrangement of defect-dipoles in epitaxial ferroelectric thin films, guiding technologies and opening an avenue for defect related studies.

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Study of defect-dipoles in an epitaxial ferroelectric thin film

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