Structure and stability of alternative gate dielectrics for Si CMOS

Snsanne Stemmer; Yan Yang; Youli Li; Brendan Foran; Patrick S. Lysaght; John A. Gisby; Jeff R. Taylor; Stephen K. Streiffer; Paul Fuoss; Soenke Seifert; Wenjuan Zhu; T. P. Ma

doi:10.1109/ISDRS.2003.1271995

Structure and stability of alternative gate dielectrics for Si CMOS

Snsanne Stemmer, Yan Yang, Youli Li, Brendan Foran, Patrick S. Lysaght, John A. Gisby, Jeff R. Taylor, Stephen K. Streiffer, Paul Fuoss, Soenke Seifert, Wenjuan Zhu, T. P. Ma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A number of binary oxides and their alloys with SiO₂ ("silicates") and Al₂O₃ ("aiuminates"), respectively, that have been predicted to be thermodynamically stable in contact with Si are candidates to replace SiO₂ in CMOS. However, reactions leading to the formation of interfacial layers have been reported when these oxides are exposed to high temperatures during device processing. Furthermore, Hf- and Zr-silicate films are reported to phase separate into a crystalline HfO₂ or ZrO₂-rich phase embedded in an amorphous, silica-rich matrix. We will present experimental studies and thermodynamic calculations of both interfacial reactions and phase separation.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	60-61
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1271995
State	Published - 2003
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: Dec 10 2003 → Dec 12 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	12/10/03 → 12/12/03

Access to Document

10.1109/ISDRS.2003.1271995

Cite this

Stemmer, S., Yang, Y., Li, Y., Foran, B., Lysaght, P. S., Gisby, J. A., Taylor, J. R., Streiffer, S. K., Fuoss, P., Seifert, S., Zhu, W., & Ma, T. P. (2003). Structure and stability of alternative gate dielectrics for Si CMOS. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 60-61). Article 1271995 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271995

@inproceedings{1b061db0c4f441fd8feb95979298a186,

title = "Structure and stability of alternative gate dielectrics for Si CMOS",

abstract = "A number of binary oxides and their alloys with SiO2 ({"}silicates{"}) and Al2O3 ({"}aiuminates{"}), respectively, that have been predicted to be thermodynamically stable in contact with Si are candidates to replace SiO2 in CMOS. However, reactions leading to the formation of interfacial layers have been reported when these oxides are exposed to high temperatures during device processing. Furthermore, Hf- and Zr-silicate films are reported to phase separate into a crystalline HfO2 or ZrO2-rich phase embedded in an amorphous, silica-rich matrix. We will present experimental studies and thermodynamic calculations of both interfacial reactions and phase separation.",

author = "Snsanne Stemmer and Yan Yang and Youli Li and Brendan Foran and Lysaght, {Patrick S.} and Gisby, {John A.} and Taylor, {Jeff R.} and Streiffer, {Stephen K.} and Paul Fuoss and Soenke Seifert and Wenjuan Zhu and Ma, {T. P.}",

year = "2003",

doi = "10.1109/ISDRS.2003.1271995",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "60--61",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Stemmer, S, Yang, Y, Li, Y, Foran, B, Lysaght, PS, Gisby, JA, Taylor, JR, Streiffer, SK, Fuoss, P, Seifert, S, Zhu, W & Ma, TP 2003, Structure and stability of alternative gate dielectrics for Si CMOS. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271995, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 60-61, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 12/10/03. https://doi.org/10.1109/ISDRS.2003.1271995

Structure and stability of alternative gate dielectrics for Si CMOS. / Stemmer, Snsanne; Yang, Yan; Li, Youli et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 60-61 1271995 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structure and stability of alternative gate dielectrics for Si CMOS

AU - Stemmer, Snsanne

AU - Yang, Yan

AU - Li, Youli

AU - Foran, Brendan

AU - Lysaght, Patrick S.

AU - Gisby, John A.

AU - Taylor, Jeff R.

AU - Streiffer, Stephen K.

AU - Fuoss, Paul

AU - Seifert, Soenke

AU - Zhu, Wenjuan

AU - Ma, T. P.

PY - 2003

Y1 - 2003

N2 - A number of binary oxides and their alloys with SiO2 ("silicates") and Al2O3 ("aiuminates"), respectively, that have been predicted to be thermodynamically stable in contact with Si are candidates to replace SiO2 in CMOS. However, reactions leading to the formation of interfacial layers have been reported when these oxides are exposed to high temperatures during device processing. Furthermore, Hf- and Zr-silicate films are reported to phase separate into a crystalline HfO2 or ZrO2-rich phase embedded in an amorphous, silica-rich matrix. We will present experimental studies and thermodynamic calculations of both interfacial reactions and phase separation.

AB - A number of binary oxides and their alloys with SiO2 ("silicates") and Al2O3 ("aiuminates"), respectively, that have been predicted to be thermodynamically stable in contact with Si are candidates to replace SiO2 in CMOS. However, reactions leading to the formation of interfacial layers have been reported when these oxides are exposed to high temperatures during device processing. Furthermore, Hf- and Zr-silicate films are reported to phase separate into a crystalline HfO2 or ZrO2-rich phase embedded in an amorphous, silica-rich matrix. We will present experimental studies and thermodynamic calculations of both interfacial reactions and phase separation.

UR - http://www.scopus.com/inward/record.url?scp=84945318161&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2003.1271995

DO - 10.1109/ISDRS.2003.1271995

M3 - Conference contribution

AN - SCOPUS:84945318161

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 60

EP - 61

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Stemmer S, Yang Y, Li Y, Foran B, Lysaght PS, Gisby JA et al. Structure and stability of alternative gate dielectrics for Si CMOS. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 60-61. 1271995. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1271995

Structure and stability of alternative gate dielectrics for Si CMOS

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