Structural relaxation and order in ion-implanted Si and Ge

J. Fortner, J. S. Lannin

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Abstract

Raman scattering measurements are reported as a function of annealing temperature on heavily damaged, ion-implanted Ge and Si. Changes in the opticlike, TO Raman bandwidth of amorphous Ge are found to correlate with the estimated heat of structural relaxation obtained from the data of Donovan et al. This result is consistent with a bond-strain model, demonstrating that structural relaxation is primarily associated with short-range bond-angle ordering. The results also allow an estimate of the temperature dependence of the width of the bond-angle distribution to be obtained with annealing. The Raman spectra of ion-implanted Si indicate greater order in the amorphous state than similarly prepared amorphous Ge. Estimates of the corresponding heat of structural relaxation of amorphous Si suggest that this should be observable.

Original languageEnglish
Pages (from-to)10154-10158
Number of pages5
JournalPhysical Review B
Volume37
Issue number17
DOIs
StatePublished - 1988
Externally publishedYes

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