TY - GEN
T1 - Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)
AU - Liang, Xuemei
AU - Qin, Li
AU - Ning, Yongqiang
AU - Liu, Yun
AU - Wang, Lijun
PY - 2013
Y1 - 2013
N2 - 920 nm OPS-VECSEL has an important application in laser display. We constructed and optimized a 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device, especially the mode, the threshold and the optical-optical translation efficiency, were analyzed by dealing with different numbers of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose the best structure of them. On this basis, we optimized the external cavity mirrors reflectivity and the simulation showed that the performances would be significantly increased.
AB - 920 nm OPS-VECSEL has an important application in laser display. We constructed and optimized a 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device, especially the mode, the threshold and the optical-optical translation efficiency, were analyzed by dealing with different numbers of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose the best structure of them. On this basis, we optimized the external cavity mirrors reflectivity and the simulation showed that the performances would be significantly increased.
KW - Finite element
KW - Optically pumped
KW - Semiconductor lasers
KW - Structural improvement
KW - Vertical external-cavity surface emitting laser
UR - http://www.scopus.com/inward/record.url?scp=84880447285&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.552.373
DO - 10.4028/www.scientific.net/KEM.552.373
M3 - Conference contribution
AN - SCOPUS:84880447285
SN - 9783037856918
T3 - Key Engineering Materials
SP - 373
EP - 376
BT - Advances in Optics Manufacture
PB - Trans Tech Publications Ltd
T2 - Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012
Y2 - 26 August 2012 through 28 August 2012
ER -