Structural characterization of a porous low-dielectric-constant thin film with a non-uniform depth profile

Eric K. Lin; Hae Jeong Lee; Gary W. Lynn; Wen Li Wu; Mark L. O'Neill

doi:10.1063/1.1495079

Structural characterization of a porous low-dielectric-constant thin film with a non-uniform depth profile

Eric K. Lin, Hae Jeong Lee, Gary W. Lynn, Wen Li Wu, Mark L. O'Neill

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Abstract

High-resolution x-ray reflectivity (XR) and small-angle neutron scattering (SANS) are applied to characterize both the nonuniform depth profile and pore structure of a low-dielectric-constant (low-k) thin film as prepared on a silicon substrate. The XR data show that the density depth profile has a multilayered structure with a dense, nonporous top layer and a less dense, porous bulk layer. A scattering invariant analysis of the SANS data is used to determine the average chord length of the pores, (14.8±2.0)nm, independent of the depth profile. Given the elemental composition of the film, the XR and SANS data are combined to calculate the mass density of the top layer, (1.13±0.05)g/cm³, the porosity of the less dense layer, (0.28±0.10), and the wall density, (0.92±0.15)g/cm³.

Original language	English
Pages (from-to)	607-609
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	4
DOIs	https://doi.org/10.1063/1.1495079
State	Published - Jul 22 2002
Externally published	Yes

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abstract = "High-resolution x-ray reflectivity (XR) and small-angle neutron scattering (SANS) are applied to characterize both the nonuniform depth profile and pore structure of a low-dielectric-constant (low-k) thin film as prepared on a silicon substrate. The XR data show that the density depth profile has a multilayered structure with a dense, nonporous top layer and a less dense, porous bulk layer. A scattering invariant analysis of the SANS data is used to determine the average chord length of the pores, (14.8±2.0)nm, independent of the depth profile. Given the elemental composition of the film, the XR and SANS data are combined to calculate the mass density of the top layer, (1.13±0.05)g/cm3, the porosity of the less dense layer, (0.28±0.10), and the wall density, (0.92±0.15)g/cm3.",

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AU - Lin, Eric K.

AU - Lee, Hae Jeong

AU - Lynn, Gary W.

AU - Wu, Wen Li

AU - O'Neill, Mark L.

PY - 2002/7/22

Y1 - 2002/7/22

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AB - High-resolution x-ray reflectivity (XR) and small-angle neutron scattering (SANS) are applied to characterize both the nonuniform depth profile and pore structure of a low-dielectric-constant (low-k) thin film as prepared on a silicon substrate. The XR data show that the density depth profile has a multilayered structure with a dense, nonporous top layer and a less dense, porous bulk layer. A scattering invariant analysis of the SANS data is used to determine the average chord length of the pores, (14.8±2.0)nm, independent of the depth profile. Given the elemental composition of the film, the XR and SANS data are combined to calculate the mass density of the top layer, (1.13±0.05)g/cm3, the porosity of the less dense layer, (0.28±0.10), and the wall density, (0.92±0.15)g/cm3.

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Structural characterization of a porous low-dielectric-constant thin film with a non-uniform depth profile

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