Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

Abhishek Vaidya; Jith Sarker; Yi Zhang; Lauren Lubecki; Joshua Wallace; Jonathan D. Poplawsky; K. Sasaki; A. Kuramata; Amit Goyal; Joseph A. Gardella; Baishakhi Mazumder; Uttam Singisetti

doi:10.1063/1.5113509

Structural, band and electrical characterization of β-(Al_0.19Ga_0.81)₂O₃ films grown by molecular beam epitaxy on Sn doped β-Ga₂O₃ substrate

Abhishek Vaidya, Jith Sarker, Yi Zhang, Lauren Lubecki, Joshua Wallace, Jonathan D. Poplawsky, K. Sasaki, A. Kuramata, Amit Goyal, Joseph A. Gardella, Baishakhi Mazumder, Uttam Singisetti

Materials MicroAnalysis

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Abstract

We characterized unintentionally doped β-(Al_0.19Ga_0.81)₂O₃ for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al_0.19Ga_0.81)₂O₃ film was grown by molecular beam epitaxy on Sn doped Ga₂O₃ substrates. Reciprocal space mapping shows a lattice matched (Al_0.19Ga_0.81)₂O₃ layer. Both APT and TEM results confirm a sharp β-(Al_0.19Ga_0.81)₂O₃/β-Ga₂O₃ interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO₂/β-(Al_0.19Ga_0.81)₂O₃ and β-(Al_0.19Ga_0.81)₂O₃/β-Ga₂O₃ interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.

Original language	English
Article number	095702
Journal	Journal of Applied Physics
Volume	126
Issue number	9
DOIs	https://doi.org/10.1063/1.5113509
State	Published - Sep 7 2019

Funding

This work was supported by the National Science Foundation (NSF) grant (No. ECCS 1607833) monitored by Dr. Dimitris Pavlidis. A portion of this work was performed in University at Buffalo, Davis Hall Electrical Engineering Cleanroom. The authors would like to thank the support from cleanroom staff. APT was conducted at Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, which is a U.S. DOE Office of Science User Facility.

Funders	Funder number
National Science Foundation

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Vaidya, A., Sarker, J., Zhang, Y., Lubecki, L., Wallace, J., Poplawsky, J. D., Sasaki, K., Kuramata, A., Goyal, A., Gardella, J. A., Mazumder, B., & Singisetti, U. (2019). Structural, band and electrical characterization of β-(Al_0.19Ga_0.81)₂O₃ films grown by molecular beam epitaxy on Sn doped β-Ga₂O₃ substrate. Journal of Applied Physics, 126(9), Article 095702. https://doi.org/10.1063/1.5113509

@article{91a3f48e427b4e3ba882d73c9b05caf0,

title = "Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate",

abstract = "We characterized unintentionally doped β-(Al0.19Ga0.81)2O3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al0.19Ga0.81)2O3 film was grown by molecular beam epitaxy on Sn doped Ga2O3 substrates. Reciprocal space mapping shows a lattice matched (Al0.19Ga0.81)2O3 layer. Both APT and TEM results confirm a sharp β-(Al0.19Ga0.81)2O3/β-Ga2O3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO2/β-(Al0.19Ga0.81)2O3 and β-(Al0.19Ga0.81)2O3/β-Ga2O3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.",

author = "Abhishek Vaidya and Jith Sarker and Yi Zhang and Lauren Lubecki and Joshua Wallace and Poplawsky, {Jonathan D.} and K. Sasaki and A. Kuramata and Amit Goyal and Gardella, {Joseph A.} and Baishakhi Mazumder and Uttam Singisetti",

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doi = "10.1063/1.5113509",

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Vaidya, A, Sarker, J, Zhang, Y, Lubecki, L, Wallace, J, Poplawsky, JD, Sasaki, K, Kuramata, A, Goyal, A, Gardella, JA, Mazumder, B & Singisetti, U 2019, 'Structural, band and electrical characterization of β-(Al_0.19Ga_0.81)₂O₃ films grown by molecular beam epitaxy on Sn doped β-Ga₂O₃ substrate', Journal of Applied Physics, vol. 126, no. 9, 095702. https://doi.org/10.1063/1.5113509

TY - JOUR

T1 - Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

AU - Vaidya, Abhishek

AU - Sarker, Jith

AU - Zhang, Yi

AU - Lubecki, Lauren

AU - Wallace, Joshua

AU - Poplawsky, Jonathan D.

AU - Sasaki, K.

AU - Kuramata, A.

AU - Goyal, Amit

AU - Gardella, Joseph A.

AU - Mazumder, Baishakhi

AU - Singisetti, Uttam

PY - 2019/9/7

Y1 - 2019/9/7

N2 - We characterized unintentionally doped β-(Al0.19Ga0.81)2O3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al0.19Ga0.81)2O3 film was grown by molecular beam epitaxy on Sn doped Ga2O3 substrates. Reciprocal space mapping shows a lattice matched (Al0.19Ga0.81)2O3 layer. Both APT and TEM results confirm a sharp β-(Al0.19Ga0.81)2O3/β-Ga2O3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO2/β-(Al0.19Ga0.81)2O3 and β-(Al0.19Ga0.81)2O3/β-Ga2O3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.

AB - We characterized unintentionally doped β-(Al0.19Ga0.81)2O3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al0.19Ga0.81)2O3 film was grown by molecular beam epitaxy on Sn doped Ga2O3 substrates. Reciprocal space mapping shows a lattice matched (Al0.19Ga0.81)2O3 layer. Both APT and TEM results confirm a sharp β-(Al0.19Ga0.81)2O3/β-Ga2O3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO2/β-(Al0.19Ga0.81)2O3 and β-(Al0.19Ga0.81)2O3/β-Ga2O3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.

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U2 - 10.1063/1.5113509

DO - 10.1063/1.5113509

M3 - Article

AN - SCOPUS:85072029538

SN - 0021-8979

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 095702

ER -

Structural, band and electrical characterization of β-(Al_0.19Ga_0.81)₂O₃ films grown by molecular beam epitaxy on Sn doped β-Ga₂O₃ substrate

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