Abstract
The effects on fluorine incorporation on the structure and optical properties of amorphous hydrogenated silicon carbide films deposited by pulsed glow discharge were investigated. Fluorine is incorporated at the expense of silicon, and films with up to 16 at.% of fluorine were obtained as determined by ion beam analysis. Structural investigation was carried by Raman and infrared spectroscopies. Infrared results showed that incorporation of fluorine occurs in the form of Si-F bonds, and Raman results showed a progressive formation of graphitic agglomerates due to fluorine incorporation in the films. Because of the relatively high bonding energy of Si-F, preferential bonding of fluorine with silicon induces small changes in the optical gap.
Original language | English |
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Pages (from-to) | 6079-6082 |
Number of pages | 4 |
Journal | Surface and Coatings Technology |
Volume | 200 |
Issue number | 20-21 |
DOIs | |
State | Published - May 22 2006 |
Externally published | Yes |
Funding
The authors are thankful to the Ion Beam Materials Laboratory staff for their support during the IBA measurements and to B. L. Bennett for the optical measurements. This work was supported by the DOE, Office of Basic Energy Sciences.
Funders | Funder number |
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U.S. Department of Energy | |
Basic Energy Sciences |
Keywords
- Fluorine
- Glow discharge
- Optical properties
- Silicon carbide