TY - GEN
T1 - Structural analysis in (100)/(001)-oriented epitaxial lead titanate thick films grown by MOCVD for MEMS application
AU - Nakaki, Hiroshi
AU - Ikariyama, Rikyu
AU - Kim, Yong Kwan
AU - Yokoyama, Shintaro
AU - Nishida, Ken
AU - Gruverman, Alexei
AU - Streiffer, Stephen
AU - Saito, Keisuke
AU - Funakubo, Hiroshi
PY - 2007
Y1 - 2007
N2 - (100)/(001)-oriented epitaxial PbTiO3 films were grown on (100) SrTiO3 and (100) Nb-SrTiO3 substrates by MOCVD. The detailed domain structure of these films was analyzed by X-ray diffraction pattern and piezoresponse force microscopy. In thick films (over 1.1 μm), much more complex domain structure has been observed compared to thin films. Domain structures of thick films consist of one kind of c-domains (c 1) and three kinds of a-domains (a1, a2 and a3). The tilting angles of a2/a3 and a 1/c1 boundaries are about 3.6° which corresponds to the inclination angle given by geometric calculation, 2arctan(c/a)-90°, where a and c are lattice parameters of strain-free state of PbTiO3. Other domain boundaries, a2/c1 and a1/a 3, are strained ones with rotation, and have not been observed in thinner films. It is assumed that this complex domain structure was formed through the strain relaxation of thick PbTiO3 films.
AB - (100)/(001)-oriented epitaxial PbTiO3 films were grown on (100) SrTiO3 and (100) Nb-SrTiO3 substrates by MOCVD. The detailed domain structure of these films was analyzed by X-ray diffraction pattern and piezoresponse force microscopy. In thick films (over 1.1 μm), much more complex domain structure has been observed compared to thin films. Domain structures of thick films consist of one kind of c-domains (c 1) and three kinds of a-domains (a1, a2 and a3). The tilting angles of a2/a3 and a 1/c1 boundaries are about 3.6° which corresponds to the inclination angle given by geometric calculation, 2arctan(c/a)-90°, where a and c are lattice parameters of strain-free state of PbTiO3. Other domain boundaries, a2/c1 and a1/a 3, are strained ones with rotation, and have not been observed in thinner films. It is assumed that this complex domain structure was formed through the strain relaxation of thick PbTiO3 films.
UR - http://www.scopus.com/inward/record.url?scp=51349110189&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2007.4393301
DO - 10.1109/ISAF.2007.4393301
M3 - Conference contribution
AN - SCOPUS:51349110189
SN - 1424413338
SN - 9781424413331
T3 - IEEE International Symposium on Applications of Ferroelectrics
SP - 469
EP - 471
BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Y2 - 27 May 2007 through 31 May 2007
ER -