Structural analysis in (100)/(001)-oriented epitaxial lead titanate thick films grown by MOCVD for MEMS application

Hiroshi Nakaki, Rikyu Ikariyama, Yong Kwan Kim, Shintaro Yokoyama, Ken Nishida, Alexei Gruverman, Stephen Streiffer, Keisuke Saito, Hiroshi Funakubo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

(100)/(001)-oriented epitaxial PbTiO3 films were grown on (100) SrTiO3 and (100) Nb-SrTiO3 substrates by MOCVD. The detailed domain structure of these films was analyzed by X-ray diffraction pattern and piezoresponse force microscopy. In thick films (over 1.1 μm), much more complex domain structure has been observed compared to thin films. Domain structures of thick films consist of one kind of c-domains (c 1) and three kinds of a-domains (a1, a2 and a3). The tilting angles of a2/a3 and a 1/c1 boundaries are about 3.6° which corresponds to the inclination angle given by geometric calculation, 2arctan(c/a)-90°, where a and c are lattice parameters of strain-free state of PbTiO3. Other domain boundaries, a2/c1 and a1/a 3, are strained ones with rotation, and have not been observed in thinner films. It is assumed that this complex domain structure was formed through the strain relaxation of thick PbTiO3 films.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages469-471
Number of pages3
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: May 27 2007May 31 2007

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Conference

Conference2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/TerritoryJapan
CityNara-city
Period05/27/0705/31/07

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