TY - GEN
T1 - Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)
AU - Liang, Xuemei
AU - Wang, Lijun
AU - Ning, Yongqiang
AU - Liu, Yun
PY - 2013
Y1 - 2013
N2 - 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode, the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis, we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device, the choice of the number of QW periods must be cautious.
AB - 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode, the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis, we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device, the choice of the number of QW periods must be cautious.
KW - Finite element
KW - Optically pumped
KW - Semiconductor lasers
KW - Structural amelioration
KW - Vertical external-cavity surface emitting laser
UR - https://www.scopus.com/pages/publications/84871795681
U2 - 10.4028/www.scientific.net/AMR.614-615.1278
DO - 10.4028/www.scientific.net/AMR.614-615.1278
M3 - Conference contribution
AN - SCOPUS:84871795681
SN - 9783037855515
T3 - Advanced Materials Research
SP - 1278
EP - 1281
BT - Advances in Power and Electrical Engineering
T2 - 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012
Y2 - 12 October 2012 through 14 October 2012
ER -