Abstract
We fabricated ultrathin ferroelectric/correlated electron oxide heterostructures composed of the ferroelectric Pb(Zr 0.2Ti 0.8)O 3 and the correlated electron oxide (CEO) La 0.8Sr 0.2MnO 3 on SrTiO 3 substrates by pulsed laser epitaxy. The hole accumulation in the ultrathin CEO layer was substantially modified by heterostructuring with the ferroelectric layer, resulting in an insulator-metal transition. In particular, our thickness dependent study showed that drastic changes in transport and magnetic properties were strongly coupled to the modulation of charge carriers by ferroelectric field effect, which was confined to the vicinity of the interface. Thus, our results provide crucial evidence that strong ferroelectric field effect control can be achieved in ultrathin (10 nm) heterostructures, yielding at least a 100 000-fold change in resistivity.
Original language | English |
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Article number | 042902 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 4 |
DOIs | |
State | Published - Jul 23 2012 |
Funding
We would like to thank Y. S. Kim for technical assistance for PFM measurements and E. Dagotto for helpful discussions. This work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.
Funders | Funder number |
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U.S. Department of Energy | |
Basic Energy Sciences | |
Division of Materials Sciences and Engineering |