Strong vortex pinning in Co-doped BaFe2 As2 single crystal thin films

C. Tarantini, S. Lee, Y. Zhang, J. Jiang, C. W. Bark, J. D. Weiss, A. Polyanskii, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, X. Q. Pan, A. Gurevich, E. E. Hellstrom, C. B. Eom, D. C. Larbalestier

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Abstract

We report the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2 As2 thin films grown on SrTiO3 / (La,Sr) (Al,Ta) O3 with different SrTiO 3 template thicknesses. The films show Jc comparable to single crystals and a maximum pinning force Fp (0.6 Tc) >5 GN/ m3 at H/Hirr ∼0.5 indicative of strong high-field vortex pinning. Due to the strong correlated c-axis pinning, J c for field along the c-axis exceeds Jc for H||a b plane, inverting the expectation of the Hc2 anisotropy. High resolution transmission electron microscopy reveals that the strong vortex pinning is due to a high density of nanosize columnar defects.

Original languageEnglish
Article number142510
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
StatePublished - 2010
Externally publishedYes

Funding

Work at NHMFL was supported under NSF Cooperative Agreement No. DMR-0084173, by the State of Florida, and by AFOSR Grant No. FA9550-06-1-0474. Work at the University of Wisconsin was supported by funding from the DOE Office of Basic Energy Sciences under Award No. DE-FG02-06ER46327. TEM work at the University of Michigan was supported by the DOE Grant No. DE-FG02-07ER46416. TEM facility was supported by NSF.

FundersFunder number
State of Florida
National Science FoundationDMR-0084173
U.S. Department of EnergyDE-FG02-07ER46416
Directorate for Mathematical and Physical Sciences0084173
Air Force Office of Scientific ResearchFA9550-06-1-0474
Basic Energy SciencesDE-FG02-06ER46327

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