Strong terahertz absorption using SiO 2/Al based metamaterial structures

Fabio Alves; Brian Kearney; Dragoslav Grbovic; Nickolay V. Lavrik; Gamani Karunasiri

doi:10.1063/1.3693407

Strong terahertz absorption using SiO ₂/Al based metamaterial structures

Fabio Alves, Brian Kearney, Dragoslav Grbovic, Nickolay V. Lavrik, Gamani Karunasiri

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

Metamaterial absorbers with nearly 100% absorption in the terahertz (THz) spectral band have been designed and fabricated using a periodic array of aluminum (Al) squares and an Al ground plane separated by a thin silicon dioxide (SiO ₂) dielectric film. The entire structure is less than 1.6 mm thick making it suitable for the fabrication of microbolometers or bi-material sensors for THz imaging. Films with different dielectric layer thicknesses exhibited resonant absorption at 4.1, 4.2, and 4.5 THz with strengths of 98%, 95%, and 88%, respectively. The measured absorption spectra are in good agreement with simulations using finite element modeling.

Original language	English
Article number	111104
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3693407
State	Published - Mar 12 2012

Funding

The work is supported in part by grants from the ONR, AFOSR, and NRO. The authors would like to thank George Jaksha and Sam Barone for technical assistance. This research was in part conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

Funders	Funder number
Office of Basic Energy Sciences
Office of Naval Research
U.S. Department of Energy
Air Force Office of Scientific Research
Oak Ridge National Laboratory
Nationaal Regieorgaan Onderwijsonderzoek

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Strong terahertz absorption using SiO ₂/Al based metamaterial structures

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