Strong magnetic field asymptotic model for binary alloyed semiconductor crystal growth

This paper presents an asymptotic model for the unsteady species transport during bulk growth of alloyed semiconductor crystals with a transverse magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi), the solute's concentration is not small, so that density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective transport, which produces nonuniformities in the concentration in both the melt and the crystal. This transient model predicts the melt motion and the distribution of species for a crystal grown in a strong transverse magnetic field.