Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

S. Copelman; H. Austin; D. Timmerman; J. D. Poplawsky; M. Waite; J. Tatebayashi; S. Ichikawa; Y. Fujiwara; V. Dierolf; B. Mitchell

doi:10.1117/12.2544005

Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN

S. Copelman, H. Austin, D. Timmerman, J. D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, B. Mitchell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Eu-doped GaN is a promising material with a wide array of potential applications in optoelectronics, optogenetics, micro displays and quantum computing. While this system has been the subject of intense investigation for the last two decades, several questions still remain about certain aspects of its optical properties, such as the polarization dependence of the optical transitions, and the coupling between the 4f-electron configuration and bulk phonons, as well and the appearance of local phonon modes. Moreover, the origin of certain emission peaks remains under debate in the literature. In this proceeding, the results of a systematic series of "site-selective" photoluminescence measurements are presented, where the properties of pulsed and continuous-wave laser excitation, such as polarization and intensity, were controlled.

Original language	English
Title of host publication	Light-Emitting Devices, Materials, and Applications XXIV
Editors	Jong Kyu Kim, Michael R. Krames, Martin Strassburg
Publisher	SPIE
ISBN (Electronic)	9781510633674
DOIs	https://doi.org/10.1117/12.2544005
State	Published - 2020
Event	Light-Emitting Devices, Materials, and Applications XXIV 2020 - San Francisco, United States Duration: Feb 3 2020 → Feb 6 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11302
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Light-Emitting Devices, Materials, and Applications XXIV 2020
Country/Territory	United States
City	San Francisco
Period	02/3/20 → 02/6/20

Funding

The work at Lehigh University was supported by the National Science Foundation Grant (No. ECCS-1140038), as well as by a CORE grant from Lehigh University. The work at Osaka University was partly supported by a Grant-in-Aid for Scientific Research (A) (JP17H01264), Grant-in-Aid for Scientific Research (S) (JP24226009) and a Grant-in-Aid for Specially Promoted Research (JP18H05212) from Japan Society for the Promotion.

Keywords

Displays
Electro-optical engineering
LED materials
Rare-earth doped semiconductors

Access to Document

10.1117/12.2544005

Cite this

Copelman, S., Austin, H., Timmerman, D., Poplawsky, J. D., Waite, M., Tatebayashi, J., Ichikawa, S., Fujiwara, Y., Dierolf, V., & Mitchell, B. (2020). Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN. In J. K. Kim, M. R. Krames, & M. Strassburg (Eds.), Light-Emitting Devices, Materials, and Applications XXIV Article 113021Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11302). SPIE. https://doi.org/10.1117/12.2544005

Copelman, S. ; Austin, H. ; Timmerman, D. et al. / Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN. Light-Emitting Devices, Materials, and Applications XXIV. editor / Jong Kyu Kim ; Michael R. Krames ; Martin Strassburg. SPIE, 2020. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "Eu-doped GaN is a promising material with a wide array of potential applications in optoelectronics, optogenetics, micro displays and quantum computing. While this system has been the subject of intense investigation for the last two decades, several questions still remain about certain aspects of its optical properties, such as the polarization dependence of the optical transitions, and the coupling between the 4f-electron configuration and bulk phonons, as well and the appearance of local phonon modes. Moreover, the origin of certain emission peaks remains under debate in the literature. In this proceeding, the results of a systematic series of {"}site-selective{"} photoluminescence measurements are presented, where the properties of pulsed and continuous-wave laser excitation, such as polarization and intensity, were controlled.",

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Copelman, S, Austin, H, Timmerman, D, Poplawsky, JD, Waite, M, Tatebayashi, J, Ichikawa, S, Fujiwara, Y, Dierolf, V & Mitchell, B 2020, Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN. in JK Kim, MR Krames & M Strassburg (eds), Light-Emitting Devices, Materials, and Applications XXIV., 113021Z, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11302, SPIE, Light-Emitting Devices, Materials, and Applications XXIV 2020, San Francisco, United States, 02/3/20. https://doi.org/10.1117/12.2544005

Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN. / Copelman, S.; Austin, H.; Timmerman, D. et al.
Light-Emitting Devices, Materials, and Applications XXIV. ed. / Jong Kyu Kim; Michael R. Krames; Martin Strassburg. SPIE, 2020. 113021Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11302).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Copelman S, Austin H, Timmerman D, Poplawsky JD, Waite M, Tatebayashi J et al. Strong crystal field splitting and polarization dependence observed in the emission from Eu³⁺ ions doped into GaN. In Kim JK, Krames MR, Strassburg M, editors, Light-Emitting Devices, Materials, and Applications XXIV. SPIE. 2020. 113021Z. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2544005