Stripe domain structure in epitaxial (001) BiFeO 3 thin films on orthorhombic TbScO 3 substrate

C. M. Folkman; S. H. Baek; H. W. Jang; C. B. Eom; C. T. Nelson; X. Q. Pan; Y. L. Li; L. Q. Chen; A. Kumar; V. Gopalan; S. K. Streiffer

doi:10.1063/1.3152009

Stripe domain structure in epitaxial (001) BiFeO ₃ thin films on orthorhombic TbScO ₃ substrate

C. M. Folkman, S. H. Baek, H. W. Jang, C. B. Eom, C. T. Nelson, X. Q. Pan, Y. L. Li, L. Q. Chen, A. Kumar, V. Gopalan, S. K. Streiffer

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Abstract

We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109°. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3 -type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.

Original language	English
Article number	251911
Journal	Applied Physics Letters
Volume	94
Issue number	25
DOIs	https://doi.org/10.1063/1.3152009
State	Published - 2009
Externally published	Yes

Funding

This work was supported by ONR under Grant No. N00014-07-1-0215, the National Science Foundation under Grant No. ECCS-0708759, and a David and Lucile Packard Fellowship (C.B.E.). Work at the University of Michigan was supported by the U.S. Department of Energy, Office of Basic Energy Science under Contract No. DMR-0820404, 0507146, and 0908718. Work at Pennsylvania State University was supported by NSF DE-AC02-06CH11367Work at the Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11367.

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@article{d81dfc69e805467a84b8df8683e290b5,

title = "Stripe domain structure in epitaxial (001) BiFeO 3 thin films on orthorhombic TbScO 3 substrate",

abstract = "We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109°. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3 -type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.",

author = "Folkman, {C. M.} and Baek, {S. H.} and Jang, {H. W.} and Eom, {C. B.} and Nelson, {C. T.} and Pan, {X. Q.} and Li, {Y. L.} and Chen, {L. Q.} and A. Kumar and V. Gopalan and Streiffer, {S. K.}",

year = "2009",

doi = "10.1063/1.3152009",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Stripe domain structure in epitaxial (001) BiFeO 3 thin films on orthorhombic TbScO 3 substrate

AU - Folkman, C. M.

AU - Baek, S. H.

AU - Jang, H. W.

AU - Eom, C. B.

AU - Nelson, C. T.

AU - Pan, X. Q.

AU - Li, Y. L.

AU - Chen, L. Q.

AU - Kumar, A.

AU - Gopalan, V.

AU - Streiffer, S. K.

PY - 2009

Y1 - 2009

N2 - We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109°. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3 -type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.

AB - We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109°. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3 -type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.

UR - http://www.scopus.com/inward/record.url?scp=67649514840&partnerID=8YFLogxK

U2 - 10.1063/1.3152009

DO - 10.1063/1.3152009

M3 - Article

AN - SCOPUS:67649514840

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251911

ER -

Stripe domain structure in epitaxial (001) BiFeO ₃ thin films on orthorhombic TbScO ₃ substrate

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