Stress induced crystallization of hydrogenated amorphous silicon

Jungwon Park; Seyeoul Kwon; Seung Ik Jun; Ilia N. Ivanov; Jinbo Cao; Janice L. Musfeldt; Philip D. Rack

doi:10.1016/j.tsf.2008.10.114

Stress induced crystallization of hydrogenated amorphous silicon

Jungwon Park, Seyeoul Kwon, Seung Ik Jun, Ilia N. Ivanov, Jinbo Cao, Janice L. Musfeldt, Philip D. Rack

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Hydrogenated amorphous silicon films were grown on to thermally oxidized silicon wafers by Radio Frequency magnetron sputtering, and SiN_x and Al₂O₃ capping layers were used to control the residual thermal stress. After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film. The stress is due to the mismatch between the coefficients of thermal expansion for the capping layer and amorphous silicon film. These results highlight the potential of thermal stress as a means to alter the crystallization in thin film architectures and suggest that even larger effects can be obtained with suitable choices of capping layer chemistry.

Original language	English
Pages (from-to)	3222-3226
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2008.10.114
State	Published - Apr 2 2009

Funding

PDR, JP, SK, would like to acknowledge support from NSF Award #0729250 from the NSF Division of Chemical, Bioengineering, Environmental, and Transport Systems. The authors would like to acknowledge a portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy. JLM would like to acknowledge the Materials Science Division, Basic Energy Sciences, U.S. Department of Energy (DE-FG02-01ER45885).

Keywords

Crystallization
Raman spectroscopy
Silicon
Stress-induced crystallization
Thin film stress
X-ray diffraction

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10.1016/j.tsf.2008.10.114

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abstract = "Hydrogenated amorphous silicon films were grown on to thermally oxidized silicon wafers by Radio Frequency magnetron sputtering, and SiNx and Al2O3 capping layers were used to control the residual thermal stress. After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film. The stress is due to the mismatch between the coefficients of thermal expansion for the capping layer and amorphous silicon film. These results highlight the potential of thermal stress as a means to alter the crystallization in thin film architectures and suggest that even larger effects can be obtained with suitable choices of capping layer chemistry.",

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AU - Park, Jungwon

AU - Kwon, Seyeoul

AU - Jun, Seung Ik

AU - Ivanov, Ilia N.

AU - Cao, Jinbo

AU - Musfeldt, Janice L.

AU - Rack, Philip D.

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AB - Hydrogenated amorphous silicon films were grown on to thermally oxidized silicon wafers by Radio Frequency magnetron sputtering, and SiNx and Al2O3 capping layers were used to control the residual thermal stress. After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film. The stress is due to the mismatch between the coefficients of thermal expansion for the capping layer and amorphous silicon film. These results highlight the potential of thermal stress as a means to alter the crystallization in thin film architectures and suggest that even larger effects can be obtained with suitable choices of capping layer chemistry.

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KW - Raman spectroscopy

KW - Silicon

KW - Stress-induced crystallization

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Stress induced crystallization of hydrogenated amorphous silicon

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