TY - GEN
T1 - Strength of bismuth telluride
AU - Wereszczak, A. A.
AU - Kirkland, T. P.
AU - Jadaan, O. M.
AU - Wang, H.
PY - 2010
Y1 - 2010
N2 - The fast-fracture or inert strength of a commercially available p- and n-type bismuth telluride was measured in uniaxial and biaxial flexure at 25 and 225°C. The processing method is recognized to produce material anisotropy, so the orientation effect on strength was also explored. Two-parameter Weibull strength distributions for p- and n-type, orientation, and temperature are contrasted. N- and p-type had equivalent strength in the RZ-orientation but the n-type was slightly stronger in the RR-orientation. The strength in the RZ-orientation was approximately twice that of the RR-orientation for both the n- and p-types. Strength decreased by approximately 15% between 25 and 225°C. Lastly, asmachined and cut surfaces produced equivalent strengths with the latter showing less strength scatter.
AB - The fast-fracture or inert strength of a commercially available p- and n-type bismuth telluride was measured in uniaxial and biaxial flexure at 25 and 225°C. The processing method is recognized to produce material anisotropy, so the orientation effect on strength was also explored. Two-parameter Weibull strength distributions for p- and n-type, orientation, and temperature are contrasted. N- and p-type had equivalent strength in the RZ-orientation but the n-type was slightly stronger in the RR-orientation. The strength in the RZ-orientation was approximately twice that of the RR-orientation for both the n- and p-types. Strength decreased by approximately 15% between 25 and 225°C. Lastly, asmachined and cut surfaces produced equivalent strengths with the latter showing less strength scatter.
UR - http://www.scopus.com/inward/record.url?scp=77951992620&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77951992620
SN - 9780470457597
T3 - Ceramic Engineering and Science Proceedings
SP - 131
EP - 140
BT - Advances in Electronic Ceramics II - A Collection of Papers Presented at the 33rd International Conference on Advanced Ceramics and Composites
T2 - Advances in Electronic Ceramics II - 33rd International Conference on Advanced Ceramics and Composites
Y2 - 18 January 2009 through 23 January 2009
ER -