Strains in InAs quantum dots embedded in GaAs: A finite element study

Strains in InAs quantum dots embedded in GaAs have been examined using a 2-D axi-symmetric finite element method within a thermo-mechanical framework. The initial shape of the dot was assumed to be conical in 3-D. Results show that the shape and the width/height ratio are critical in determining the strains within the quantum dots. Results of the calculation are compared with the results of other calculations and experimental measurements of strains using the scanning tunneling microscope (STM).