TY - JOUR
T1 - Strains in InAs quantum dots embedded in GaAs
T2 - A finite element study
AU - Muralidharan, Govindarajan
PY - 2000
Y1 - 2000
N2 - Strains in InAs quantum dots embedded in GaAs have been examined using a 2-D axi-symmetric finite element method within a thermo-mechanical framework. The initial shape of the dot was assumed to be conical in 3-D. Results show that the shape and the width/height ratio are critical in determining the strains within the quantum dots. Results of the calculation are compared with the results of other calculations and experimental measurements of strains using the scanning tunneling microscope (STM).
AB - Strains in InAs quantum dots embedded in GaAs have been examined using a 2-D axi-symmetric finite element method within a thermo-mechanical framework. The initial shape of the dot was assumed to be conical in 3-D. Results show that the shape and the width/height ratio are critical in determining the strains within the quantum dots. Results of the calculation are compared with the results of other calculations and experimental measurements of strains using the scanning tunneling microscope (STM).
UR - http://www.scopus.com/inward/record.url?scp=0034226483&partnerID=8YFLogxK
U2 - 10.1143/jjap.39.l658
DO - 10.1143/jjap.39.l658
M3 - Article
AN - SCOPUS:0034226483
SN - 0021-4922
VL - 39
SP - L658-L660
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 7 A
ER -