Strain relaxation of boron nitride thin films on silicon

W. Donner; H. Dosch; S. Ulrich; H. Ehrhardt; D. Abernathy

doi:10.1063/1.121998

Strain relaxation of boron nitride thin films on silicon

W. Donner, H. Dosch, S. Ulrich, H. Ehrhardt, D. Abernathy

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Abstract

Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000°C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 Å.

Original language	English
Pages (from-to)	777-779
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	6
DOIs	https://doi.org/10.1063/1.121998
State	Published - 1998
Externally published	Yes

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10.1063/1.121998

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@article{9ce43bb2497b4735adf9aaf8985199e7,

title = "Strain relaxation of boron nitride thin films on silicon",

abstract = "Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000°C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 {\AA}.",

author = "W. Donner and H. Dosch and S. Ulrich and H. Ehrhardt and D. Abernathy",

year = "1998",

doi = "10.1063/1.121998",

language = "English",

volume = "73",

pages = "777--779",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Strain relaxation of boron nitride thin films on silicon

AU - Donner, W.

AU - Dosch, H.

AU - Ulrich, S.

AU - Ehrhardt, H.

AU - Abernathy, D.

PY - 1998

Y1 - 1998

N2 - Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000°C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 Å.

AB - Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000°C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 Å.

UR - http://www.scopus.com/inward/record.url?scp=0000989867&partnerID=8YFLogxK

U2 - 10.1063/1.121998

DO - 10.1063/1.121998

M3 - Article

AN - SCOPUS:0000989867

SN - 0003-6951

VL - 73

SP - 777

EP - 779

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Strain relaxation of boron nitride thin films on silicon

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