Strain-induced metal-insulator transition of the Ge(111) surface

T. Miller; T. C. Hsieh; P. John; A. P. Shapiro; A. L. Wachs; T. C. Chiang

doi:10.1103/PhysRevB.33.4421

Strain-induced metal-insulator transition of the Ge(111) surface

T. Miller, T. C. Hsieh, P. John, A. P. Shapiro, A. L. Wachs, T. C. Chiang

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Abstract

The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.

Original language	English
Pages (from-to)	4421-4423
Number of pages	3
Journal	Physical Review B
Volume	33
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.33.4421
State	Published - 1986
Externally published	Yes

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title = "Strain-induced metal-insulator transition of the Ge(111) surface",

abstract = "The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.",

author = "T. Miller and Hsieh, {T. C.} and P. John and Shapiro, {A. P.} and Wachs, {A. L.} and Chiang, {T. C.}",

year = "1986",

doi = "10.1103/PhysRevB.33.4421",

language = "English",

volume = "33",

pages = "4421--4423",

journal = "Physical Review B",

issn = "0163-1829",

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T1 - Strain-induced metal-insulator transition of the Ge(111) surface

AU - Miller, T.

AU - Hsieh, T. C.

AU - John, P.

AU - Shapiro, A. P.

AU - Wachs, A. L.

AU - Chiang, T. C.

PY - 1986

Y1 - 1986

N2 - The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.

AB - The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.

UR - http://www.scopus.com/inward/record.url?scp=35949020438&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.33.4421

DO - 10.1103/PhysRevB.33.4421

M3 - Article

AN - SCOPUS:35949020438

SN - 0163-1829

VL - 33

SP - 4421

EP - 4423

JO - Physical Review B

JF - Physical Review B

IS - 6

ER -

Strain-induced metal-insulator transition of the Ge(111) surface

Abstract

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