Abstract
ZnSe layers have been grown by molecular beam epitaxy on high-purity, high-quality ZnSe wafers [(100) oriented] cut from ingots grown by the iodine vapor transport method. Photoluminescence (PL) analysis indicates the homoepitaxial ZnSe material to be of ultra-high purity as well as being strain-free relative to ZnSe/(100) GaAs layers which exhibit in-plane biaxial tension. The 10 K PL spectra recorded from homoepitaxial layers exhibit unsplit free- and donor-bound exciton transitions of comparable intensity together with a strong peak at 2.7768 eV believed to be the so-called Iv transition in relaxed ZnSe. The ultra-high purity nature of the homoepitaxial layers is attributed to the high purity of the substrate material in addition to the use of high purity Zn and Se source materials in this work.
| Original language | English |
|---|---|
| Pages (from-to) | 475-477 |
| Number of pages | 3 |
| Journal | Journal of Materials Research |
| Volume | 5 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 1990 |
| Externally published | Yes |
Funding
The authors wish to thank Dr. John Potts of 3MSt. Paul for performing the PL measurements and for valuable discussions. Research at the University of Florida was supported in part by the State of Florida under the Microfabritech Program and by the Defense Advanced Research Projects Agency and the National
| Funders | Funder number |
|---|---|
| State of Florida | |
| Defense Advanced Research Projects Agency |