Strain engineering 4H-SiC with ion beams

F. X. Zhang, Y. Tong, Haizhou Xue, J. K. Keum, Yanwen Zhang, A. Boulle, A. Debelle, W. J. Weber

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12 Scopus citations

Abstract

Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 1014 ions/cm2 experiences 7.3% strain over the depth of 650 nm. Strain relaxation from ionization-induced annealing was directly observed due to subsequent irradiation with 21 MeV Ni ions to a fluence of 2 × 1014 ions/cm2. These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.

Original languageEnglish
Article number221904
JournalApplied Physics Letters
Volume114
Issue number22
DOIs
StatePublished - Jun 3 2019

Funding

This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy of Sciences, Materials Sciences and Engineering Division. H.X. was supported by the University of Tennessee Governor’s Chair program for RBS/C.

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