Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

Physics

• Transition Metal Dichalcogenide 100%
• Optoelectronics 100%
• Energy Gaps (Solid State) 100%
• Optoelectronic Device 66%
• Tensile Strain 66%
• Quasiparticle 33%
• Energetics 33%
• First Principle 33%
• Absorption Spectra 33%
• 2D Material 33%
• Axial Strain 33%
• Optical Property 33%
• Density Functional Theory 33%

Material Science

• Transition Metal Dichalcogenide 100%
• Heterojunction 100%
• Tensile Strain 40%
• Density 20%
• Electronic Property 20%
• Optical Property 20%
• Two-Dimensional Material 20%
• Band Offset 20%
• Absorption Spectra 20%