Strain effect of multilayer FeN structure on GaAs substrate

Xiaowei Zhang; Nian Ji; Valeria Lauter; Hailemariam Ambaye; Jian Ping Wang

doi:10.1063/1.4800086

Strain effect of multilayer FeN structure on GaAs substrate

Xiaowei Zhang, Nian Ji, Valeria Lauter, Hailemariam Ambaye, Jian Ping Wang

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe₁₆N₂, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe ₆₅Co₃₅ Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

Original language	English
Article number	17E149
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4800086
State	Published - May 7 2013

Funding

This work was partially supported by Seagate Technology and Western Digital. Parts of this work were carried out in the Characterization Facility through NSF MRSEC program at University of Minnesota.

Funders	Funder number
Seagate Technology and Western Digital

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title = "Strain effect of multilayer FeN structure on GaAs substrate",

abstract = "Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe 65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.",

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T1 - Strain effect of multilayer FeN structure on GaAs substrate

AU - Zhang, Xiaowei

AU - Ji, Nian

AU - Lauter, Valeria

AU - Ambaye, Hailemariam

AU - Wang, Jian Ping

PY - 2013/5/7

Y1 - 2013/5/7

N2 - Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe 65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

AB - Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe 65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

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Strain effect of multilayer FeN structure on GaAs substrate

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