Strain driven anisotropic magnetoresistance in antiferromagnetic La 0.4Sr0.6MnO3

A. T. Wong; C. Beekman; H. Guo; W. Siemons; Z. Gai; E. Arenholz; Y. Takamura; T. Z. Ward

doi:10.1063/1.4892420

Strain driven anisotropic magnetoresistance in antiferromagnetic La _0.4Sr_0.6MnO₃

A. T. Wong, C. Beekman, H. Guo, W. Siemons, Z. Gai, E. Arenholz, Y. Takamura, T. Z. Ward

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21 Scopus citations

Abstract

We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La_1-xSr_xMnO₃ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

Original language	English
Article number	052401
Journal	Applied Physics Letters
Volume	105
Issue number	5
DOIs	https://doi.org/10.1063/1.4892420
State	Published - Aug 4 2014

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abstract = "We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1-xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.",

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T1 - Strain driven anisotropic magnetoresistance in antiferromagnetic La 0.4Sr0.6MnO3

AU - Wong, A. T.

AU - Beekman, C.

AU - Guo, H.

AU - Siemons, W.

AU - Gai, Z.

AU - Arenholz, E.

AU - Takamura, Y.

AU - Ward, T. Z.

PY - 2014/8/4

Y1 - 2014/8/4

N2 - We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1-xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

AB - We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1-xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

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Strain driven anisotropic magnetoresistance in antiferromagnetic La _0.4Sr_0.6MnO₃

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