Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

Bohan Xu; Patrick D. Lomenzo; Alfred Kersch; Tony Schenk; Claudia Richter; Chris M. Fancher; Sergej Starschich; Fenja Berg; Peter Reinig; Kristina M. Holsgrove; Takanori Kiguchi; Thomas Mikolajick; Ulrich Boettger; Uwe Schroeder

doi:10.1002/adfm.202311825

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂

Bohan Xu, Patrick D. Lomenzo, Alfred Kersch, Tony Schenk, Claudia Richter, Chris M. Fancher, Sergej Starschich, Fenja Berg, Peter Reinig, Kristina M. Holsgrove, Takanori Kiguchi, Thomas Mikolajick, Ulrich Boettger, Uwe Schroeder

Materials for Advanced Manufacturing

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Since the discovery of ferroelectricity in doped HfO₂ and ZrO₂ thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO₂ films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO₂ films, which can be applied to other fluorite-structured films.

Original language	English
Article number	2311825
Journal	Advanced Functional Materials
Volume	34
Issue number	8
DOIs	https://doi.org/10.1002/adfm.202311825
State	Published - Feb 19 2024

Funding

B.X. and P.D.L. were financially supported by the Deutsche Forschungs Gemeinschaft (DFG) within the following projects (Zeppelin (433647091) and Homer (430054035)). The work of P.R. was partly funded by the Federal Ministry of Education and Research (BMBF) under the project reference numbers 16FMD01K, 16FMD02 and 16FMD03. S.S., F.B., and U.B. were financially supported by the DFG with the project Zeppelin (433647091). T.S. and C.R. were financed by DFG “Inferox” project (MI 1247/11-2). T.M. and U.S. were financially supported out of the Saxonian State budget approved by the delegates of the Saxon State Parliament. This work was co-financed from the tax revenues on the basis of the budget adopted by the Saxon State Parliament. Open access funding enabled and organized by Projekt DEAL. B.X. and P.D.L. were financially supported by the Deutsche Forschungs Gemeinschaft (DFG) within the following projects (Zeppelin (433647091) and Homer (430054035)). The work of P.R. was partly funded by the Federal Ministry of Education and Research (BMBF) under the project reference numbers 16FMD01K, 16FMD02 and 16FMD03. S.S., F.B., and U.B. were financially supported by the DFG with the project Zeppelin (433647091). T.S. and C.R. were financed by DFG “Inferox” project (MI 1247/11‐2). T.M. and U.S. were financially supported out of the Saxonian State budget approved by the delegates of the Saxon State Parliament. This work was co‐financed from the tax revenues on the basis of the budget adopted by the Saxon State Parliament.

Keywords

ferroelectricity
strain
stress
thin film
zirconia

Access to Document

10.1002/adfm.202311825

Cite this

Xu, B., Lomenzo, P. D., Kersch, A., Schenk, T., Richter, C., Fancher, C. M., Starschich, S., Berg, F., Reinig, P., Holsgrove, K. M., Kiguchi, T., Mikolajick, T., Boettger, U., & Schroeder, U. (2024). Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂. Advanced Functional Materials, 34(8), Article 2311825. https://doi.org/10.1002/adfm.202311825

@article{6d0681e2be5148159a7efc24ee9bcf45,

title = "Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2",

abstract = "Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite-structured films.",

keywords = "ferroelectricity, strain, stress, thin film, zirconia",

author = "Bohan Xu and Lomenzo, {Patrick D.} and Alfred Kersch and Tony Schenk and Claudia Richter and Fancher, {Chris M.} and Sergej Starschich and Fenja Berg and Peter Reinig and Holsgrove, {Kristina M.} and Takanori Kiguchi and Thomas Mikolajick and Ulrich Boettger and Uwe Schroeder",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.",

year = "2024",

month = feb,

day = "19",

doi = "10.1002/adfm.202311825",

language = "English",

volume = "34",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "wiley",

number = "8",

}

TY - JOUR

T1 - Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

AU - Xu, Bohan

AU - Lomenzo, Patrick D.

AU - Kersch, Alfred

AU - Schenk, Tony

AU - Richter, Claudia

AU - Fancher, Chris M.

AU - Starschich, Sergej

AU - Berg, Fenja

AU - Reinig, Peter

AU - Holsgrove, Kristina M.

AU - Kiguchi, Takanori

AU - Mikolajick, Thomas

AU - Boettger, Ulrich

AU - Schroeder, Uwe

PY - 2024/2/19

Y1 - 2024/2/19

N2 - Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite-structured films.

AB - Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite-structured films.

KW - ferroelectricity

KW - strain

KW - stress

KW - thin film

KW - zirconia

UR - http://www.scopus.com/inward/record.url?scp=85176102439&partnerID=8YFLogxK

U2 - 10.1002/adfm.202311825

DO - 10.1002/adfm.202311825

M3 - Article

AN - SCOPUS:85176102439

SN - 1616-301X

VL - 34

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 8

M1 - 2311825

ER -