Abstract
Straight single-crystalline Ge nanowires with a uniform diameter distribution of 50-80 nm and lengths up to tens of micrometers were grown in a high yield on sol-gel prepared gold/silica substrates by using Ge powder as the Ge source. Detailed electron microscopy analyses show that the nanowires grow through a vapor-liquid-solid growth mechanism with gold nanoparticles located at the nanowire tips. By using transmission electron microscope grids as the shadow mask, the sol-gel technique can be readily adapted to prepare patterned film-like gold/silica substrates, so that regular micropatterns of Ge nanowires were obtained, which could facilitate the integration of Ge nanowires for characterization and devices.
| Original language | English |
|---|---|
| Pages (from-to) | 251-255 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 134 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2005 |
Funding
This research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL), managed by UT-Battelle, LLC, for the US Department of Energy under contract No. DE-AC05-00OR22725. The authors acknowledge the ORNL SHaRE Collaborative Research Center for the use of their electron microscopy facilities.
| Funders | Funder number |
|---|---|
| U.S. Department of Energy | DE-AC05-00OR22725 |
| Oak Ridge National Laboratory | |
| UT-Battelle |
Keywords
- A. Germanium nanowires
- B. Sol-gel
- B. Vapor-liquid-solid growth mechanism
- C. Scanning and transmission electron microscopy