Abstract
The total electron-stimulated desorption yield of Cl+ ions from the Cl-terminated Si(111) surface is shown to exhibit fine-structure oscillations as a function of incident electron beam direction. We demonstrate that this fine structure is consistent with quantum-mechanical scattering and interference of the incident electron. Comparison of experimental data to a qualitative theory reveals the site of the excitation responsible for desorption, and the ground-state atomic bonding geometry of the desorbate. The data are consistent with desorption initiated by an excitation localized on the Si atom bonded to Cl.
Original language | English |
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Pages (from-to) | 3348-3351 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 82 |
Issue number | 16 |
DOIs | |
State | Published - 1999 |