Step instabilities: A new kinetic route to 3D growth

K. M. Chen, D. E. Jesson, S. J. Pennycook, M. Mostoller, T. Kaplan, T. Thundat, R. J. Warmack

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Atomic force microscopy studies of Ge /Si(001) molecular beam epitaxy growth reveal a crucial new role of surface steps in the 2D to 3D transition. At or near step flow we show that SA steps undergo a stress-driven triangular step instability. The resulting spatial variation of surface strain, although small, can dramatically influence the activation barrier for 3D island nucleation. This provides a surprising kinetic route for the onset of 3D growth associated with the apex regions of triangular steps.

Original languageEnglish
Pages (from-to)1582-1585
Number of pages4
JournalPhysical Review Letters
Volume75
Issue number8
DOIs
StatePublished - 1995

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