Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Christopher T. Shelton; Isaac Bryan; Elizabeth A. Paisley; Edward Sachet; Jon F. Ihlefeld; Nick Lavrik; Ramón Collazo; Zlatko Sitar; Jon Paul Maria

doi:10.1063/1.4993840

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Christopher T. Shelton, Isaac Bryan, Elizabeth A. Paisley, Edward Sachet, Jon F. Ihlefeld, Nick Lavrik, Ramón Collazo, Zlatko Sitar, Jon Paul Maria

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 10⁴ cm^-2, step-free mesas up to 200 × 200 μm² in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

Original language	English
Article number	096109
Journal	APL Materials
Volume	5
Issue number	9
DOIs	https://doi.org/10.1063/1.4993840
State	Published - Sep 1 2017

Funding

The authors acknowledge support from the National Science Foundation Materials Research Division (No. DMR-1507947). Fabrication of confined-area mesas was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Funding for substrates and experimental design support were provided by the U.S. Department of Energy’s Office of Electricity Delivery and Energy Reliability (OE) Energy Storage Program managed by Dr. Imre Gyuk. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

Funders	Funder number
National Science Foundation Materials Research Division
U.S. Department of Energy
National Nuclear Security Administration	DE-NA0003525
National Nuclear Security Administration

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title = "Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy",

abstract = "A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.",

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AU - Bryan, Isaac

AU - Paisley, Elizabeth A.

AU - Sachet, Edward

AU - Ihlefeld, Jon F.

AU - Lavrik, Nick

AU - Collazo, Ramón

AU - Sitar, Zlatko

AU - Maria, Jon Paul

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AB - A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

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Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

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