Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

Zhu Jun Wang, Jichen Dong, Yi Cui, Gyula Eres, Olaf Timpe, Qiang Fu, Feng Ding, R. Schloegl, Marc Georg Willinger

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Abstract

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

Original languageEnglish
Article number13256
JournalNature Communications
Volume7
DOIs
StatePublished - Oct 19 2016

Funding

The work done in Hong Kong PolyU was supported by National Science Foundation of China (21573186 and 21273189). The contribution to this work by G.E. was supported by the U.S. Department of Energy (DOE), Office of Science (OS), Basic Energy Sciences (BES), Materials Sciences and Engineering Division. Y.C. is grateful for support from the NANO-X Workstation in Suzhou and Thousand Young Talents Program in China.

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