Stacking polymorphism of PtSe2: its implication to layer-dependent metal-insulator transitions

Jeonghwan Ahn, Iuegyun Hong, Gwangyoung Lee, Hyeondeok Shin, Anouar Benali, Yongkyung Kwon, Jaron T. Krogel

Research output: Contribution to journalArticlepeer-review

Abstract

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examine the structural stability and interlayer binding properties of PtSe2. Our DMC study reveals that AA and AB-r bilayer stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT calculations with the r2SCAN+rVV10 functional uncover pronounced stacking polymorphism in few-layer PtSe2, driven by degenerate AA and AB-r interfaces, which leads to substantial band gap variations across different stacking configurations. This polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe2. Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of PtSe2, advancing our understanding of its fundamental properties and refining theoretical models for practical applications in nanoelectronic devices.

Original languageEnglish
Article number34
Journalnpj 2D Materials and Applications
Volume9
Issue number1
DOIs
StatePublished - Dec 2025

Funding

This work was primarily supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, as part of the Computational Materials Sciences Program and Center for Predictive Simulation of Functional Materials. J. Ahn (final calculations, writing), H. Shin (editing), A. Benali (editing), and J. T. Krogel (mentorship, analysis, writing) were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, as part of the Computational Materials Sciences Program and Center for Predictive Simulation of Functional Materials. Initial work by J. Ahn was supported by Konkuk University Researcher Fund in 2019. Y. Kwon, I. Hong, and G. Lee were supported by the Basic Science Research Program (2018R1D1A1B07042443) through the National Research Foundation of Korea funded by the Ministry of Education. We also acknowledge the support from the Supercomputing Center/Korea Institute of Science and Technology Information with supercomputing resources including technical support (KSC-2020-CRE-0126). An award of computer time was provided by the Innovative and Novel Computational Impact on Theory and Experiment (INCITE) program. This research used resources of the Argonne Leadership Computing Facility, which is a DOE Office of Science User Facility supported under contract DE-AC02-06CH11357. This research also used resources of the Oak Ridge Leadership Computing Facility, which is a DOE Office of Science User Facility supported under Contract DE-AC05-00OR22725. This manuscript has been authored by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up,irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

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