Abstract
Enhancement-mode amorphous indium gallium zinc oxide (α-IGZO) channel thin film transistors (TFTs) with a 6 μm gate length and a 100 μm gate width were fabricated on glass substrates by rf magnetron sputtering near room temperature. The resistivities of the α -IGZO films were controlled from 10-1 to 103 μm by varying the deposition power of 75-300 W. The n -type carrier concentration in the channel was 6.5× 1017 cm-3. The gate oxide was 90-nm -thick Si Nx, deposited by plasma enhanced chemical vapor deposition at 70 °C. The bottom-gate TFTs had saturation mobility of ∼17 cm2 V-1 s-1 and the drain current on-to-off ratio of ∼ > 105, a subthreshold gate-voltage swing of ∼0.5 V decade-1, and a threshold voltage of 2.1 V. In the TFT with a gate length of 6 μm and a gate width of 100 μm, the relative change of saturation mobility and threshold voltage was less than ±1.5% after 500 h aging time at room temperature. This demonstrates that α -IGZO films are promising semiconductor materials for long-term-stable transparent TFT applications.
Original language | English |
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Pages (from-to) | 959-962 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 26 |
Issue number | 3 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Funding
This work was partially supported by the DOE under Grant No. DE-FC26-04NT42271 (Ryan Egidi), Army Research Office under Grant No. DAAD19-01-1-0603 and NSF (DMR 0700416, L. Hess). The authors thank MAIC and UFNF staff for their help in the performance of this work.
Funders | Funder number |
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U.S. Department of Energy | DE-FC26-04NT42271 |
Army Research Office |