Sr/Bi ratio effects for SrxBiyTa2O9 grown by pulsed laser ablation

Darin T. Thomas; Norifumi Fujimura; S. K. Streiffer; Orlando Auciello; Angus I. Kingon

Sr/Bi ratio effects for Sr_xBi_yTa₂O₉ grown by pulsed laser ablation

Darin T. Thomas, Norifumi Fujimura, S. K. Streiffer, Orlando Auciello, Angus I. Kingon

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr_1-zBi_2.1+2/3zTa₂O₉. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z = 0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650 °C.

Original language	English
Pages	495-498
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Conference

Conference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	08/18/96 → 08/21/96

Cite this

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title = "Sr/Bi ratio effects for SrxBiyTa2O9 grown by pulsed laser ablation",

abstract = "In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr1-zBi2.1+2/3zTa2O9. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z = 0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650 °C.",

author = "Thomas, {Darin T.} and Norifumi Fujimura and Streiffer, {S. K.} and Orlando Auciello and Kingon, {Angus I.}",

year = "1996",

language = "English",

pages = "495--498",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Sr/Bi ratio effects for Sr_xBi_yTa₂O₉ grown by pulsed laser ablation. / Thomas, Darin T.; Fujimura, Norifumi; Streiffer, S. K. et al.
1996. 495-498 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Sr/Bi ratio effects for SrxBiyTa2O9 grown by pulsed laser ablation

AU - Thomas, Darin T.

AU - Fujimura, Norifumi

AU - Streiffer, S. K.

AU - Auciello, Orlando

AU - Kingon, Angus I.

PY - 1996

Y1 - 1996

N2 - In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr1-zBi2.1+2/3zTa2O9. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z = 0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650 °C.

AB - In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr1-zBi2.1+2/3zTa2O9. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z = 0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650 °C.

UR - http://www.scopus.com/inward/record.url?scp=0030370988&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030370988

SP - 495

EP - 498

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Sr/Bi ratio effects for Sr_xBi_yTa₂O₉ grown by pulsed laser ablation

Abstract

Conference

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