Abstract
We have devised a technique for spectral imaging using accurate ab initio electron energy loss near edge structure (ELNES) data and function field visualization. The technique is initially applied to a planar defect model in Si with different ring structures and no broken bonds where experimental probes are severely limited. The same model with B doping is also considered. It is shown that specific deviations in different energy ranges of the ELNES spectra are correlated with different structural components of the models.
Original language | English |
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Pages (from-to) | 1472-1478 |
Number of pages | 7 |
Journal | Ultramicroscopy |
Volume | 109 |
Issue number | 12 |
DOIs | |
State | Published - Nov 2009 |
Funding
This work was supported by the US Department of Energy under Grant no. DE-FG02-84DR45170 . This research used the resources of NERSC supported by the Office of Science of DOE under contract no. DE-AC03-76SF00098 and the University of Missouri Bioinformatics Consortium. Research sponsored by the Division of Materials Sciences and Engineering, US Department of Energy (ARL, SJP).
Keywords
- Ab initio
- EELS
- ELNES
- Si defect
- Spectral imaging