Spectroscopic ellipsometry studies of nanocrystalline silicon in thin-film silicon dioxide

Gerald E. Jellison; Stephen P. Withrow; Supriya Jaiswal; Christopher M. Rouleau; John T. Simpson; Clark W. White; C. Owen Griffiths

Spectroscopic ellipsometry studies of nanocrystalline silicon in thin-film silicon dioxide

Gerald E. Jellison, Stephen P. Withrow, Supriya Jaiswal, Christopher M. Rouleau, John T. Simpson, Clark W. White, C. Owen Griffiths

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100°C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 10²⁰ Si atoms/cm³) increase the refractive index by a small amount (Δn∼0.006 at 600nm), while implantations with moderate dose (5 × 10²¹ Si atoms/cm³) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).

Original language	English
Pages (from-to)	259-264
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	737
State	Published - 2003
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002

Cite this

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title = "Spectroscopic ellipsometry studies of nanocrystalline silicon in thin-film silicon dioxide",

abstract = "Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100°C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 1020 Si atoms/cm3) increase the refractive index by a small amount (Δn∼0.006 at 600nm), while implantations with moderate dose (5 × 1021 Si atoms/cm3) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).",

author = "Jellison, {Gerald E.} and Withrow, {Stephen P.} and Supriya Jaiswal and Rouleau, {Christopher M.} and Simpson, {John T.} and White, {Clark W.} and Griffiths, {C. Owen}",

year = "2003",

language = "English",

volume = "737",

pages = "259--264",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

}

TY - JOUR

T1 - Spectroscopic ellipsometry studies of nanocrystalline silicon in thin-film silicon dioxide

AU - Jellison, Gerald E.

AU - Withrow, Stephen P.

AU - Jaiswal, Supriya

AU - Rouleau, Christopher M.

AU - Simpson, John T.

AU - White, Clark W.

AU - Griffiths, C. Owen

PY - 2003

Y1 - 2003

N2 - Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100°C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 1020 Si atoms/cm3) increase the refractive index by a small amount (Δn∼0.006 at 600nm), while implantations with moderate dose (5 × 1021 Si atoms/cm3) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).

AB - Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100°C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 1020 Si atoms/cm3) increase the refractive index by a small amount (Δn∼0.006 at 600nm), while implantations with moderate dose (5 × 1021 Si atoms/cm3) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).

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M3 - Conference article

AN - SCOPUS:0038826103

SN - 0272-9172

VL - 737

SP - 259

EP - 264

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Spectroscopic ellipsometry studies of nanocrystalline silicon in thin-film silicon dioxide

Abstract

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