Specific grain boundary resistivity measurements in thin film copper bicrystals

Nagraj S. Kulkarni, Boyd M. Evans, Tae Hwan Kim, An Ping Li, Edward A. Kenik, Don M. Nicholson

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A technique to estimate the specific grain boundary resistivity contribution in Cu lines using nanoscale four-probe STM measurements across thin film bamboo grain boundaries is presented. FIB milling of evaporated copper films was utilized to create Cu lines of various widths (400-4 μm). BSE and OIM microscopy was used to characterize the microstructure and texture of annealed Cu films containing these lines. Preliminary measurements using a fixed probe spacing with the four-probe STM technique indicated the sensitivity of the technique to detect variations in resistances along the length of the line though conversion to resistivities resulted in abnormally high values likely caused by material redeposition and/or Ga ion impregnation during FIB milling.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages269-274
Number of pages6
StatePublished - 2009
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: Sep 23 2008Sep 25 2008

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Conference

ConferenceAdvanced Metallization Conference 2008, AMC 2008
Country/TerritoryUnited States
CitySan Diego, CA
Period09/23/0809/25/08

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