Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

D. Toet; P. M. Smith; T. W. Sigmon; Michael O. Thompson

doi:10.1063/1.126959

Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

D. Toet, P. M. Smith, T. W. Sigmon, Michael O. Thompson

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6 Scopus citations

Abstract

Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-re solved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material.

Original language	English
Pages (from-to)	307-309
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	2
DOIs	https://doi.org/10.1063/1.126959
State	Published - Jul 10 2000
Externally published	Yes

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title = "Spatially selective materials deposition by hydrogen-assisted laser-induced transfer",

abstract = "Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-re solved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material.",

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AU - Toet, D.

AU - Smith, P. M.

AU - Sigmon, T. W.

AU - Thompson, Michael O.

PY - 2000/7/10

Y1 - 2000/7/10

N2 - Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-re solved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material.

AB - Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-re solved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material.

UR - https://www.scopus.com/pages/publications/0346355240

U2 - 10.1063/1.126959

DO - 10.1063/1.126959

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

Abstract

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